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2MBI150VH-170-50 Datasheet

Part Number 2MBI150VH-170-50
Manufacturers Fuji Electric
Logo Fuji Electric
Description IGBT
Datasheet 2MBI150VH-170-50 Datasheet2MBI150VH-170-50 Datasheet (PDF)

http://www.fujielectric.com/products/semiconductor/ 2MBI150VH-170-50 IGBT Modules IGBT MODULE (V series) 1700V / 150A / 2 in one package Features High speed switching Voltage drive Low Inductance module structure Package No. : M276 Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as Welding machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at TC=25°C unless otherwise specified) Items Collect.

  2MBI150VH-170-50   2MBI150VH-170-50






IGBT

http://www.fujielectric.com/products/semiconductor/ 2MBI150VH-170-50 IGBT Modules IGBT MODULE (V series) 1700V / 150A / 2 in one package Features High speed switching Voltage drive Low Inductance module structure Package No. : M276 Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as Welding machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at TC=25°C unless otherwise specified) Items Collector-Emitter voltage Gate-Emitter voltage Symbols VCES VGES Conditions IC Continuous Collector current IC pulse -IC -IC pulse Collector power dissipation PC Junction temperature Tj Operating junction temperature (under switching conditions) Tjop Case temperature TC Storage temperature Tstg Isolation voltage between terminal and copper base (*1) Viso Screw torque Mounting (*2) Terminals (*3) - 1ms 1ms 1 device AC : 1min. Note *1: All terminals should be connected together during the test. Note *2: Recommendable Value : 3.0-6.0 N·m (M5 or M6) Note *3: Recommendable Value : 2.5-5.0 N·m (M5) Electrical characteristics (at Tj= 25°C unless otherwise specified) TC=25°C TC=100°C Items Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Internal gate resistance Input capacitance Turn-on time Turn-off time Forward on voltage Reverse recovery time Symbols ICES IGES VGE (th) VCE (sat) (terminal).


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