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2N2102 Datasheet

Part Number 2N2102
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description EPITAXIAL PLANAR NPN TRANSISTOR
Datasheet 2N2102 Datasheet2N2102 Datasheet (PDF)

® 2N2102 EPITAXIAL PLANAR NPN s GENERAL PURPOSE AMPLIFIER AND SWITCH DESCRIPTION The 2N2102 is a silicon Planar Epitaxial NPN )transistor in Jedec TO-39 metal case. It is t(sintended for a wide variety of small-signall and cmedium power applications in military and Produindustrial equipments. TO-39 - ObsoleteINTERNAL SCHEMATIC DIAGRAM Obsolete Product(s)ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VCER VEBO IC Ptot Tstg Tj Parameter Collector-Base Voltage (IE = 0) Collector-Emitter Voltage .

  2N2102   2N2102






Part Number 2N2102
Manufacturers Multicomp
Logo Multicomp
Description Transistor
Datasheet 2N2102 Datasheet2N2102 Datasheet (PDF)

Transistor Description: This is a Silicon NPN transistor in a TO-39 type case designed primarily for amplifier and switching applications. This device features high breakdown voltage low leakage current, low capacity, and beta useful over an extremely wide current range. Absolute Maximum Ratings: Collector-Base Voltage, Vcbo : 120V Collector-Emitter Voltage, Vceo : 65V Emitter-Base Voltage, Vebo : 7V Continuous Collector Current, Ic : 1A Total Device Dissipation (Ta = +25ºC), Pd : 80.

  2N2102   2N2102







Part Number 2N2102
Manufacturers Comset Semiconductor
Logo Comset Semiconductor
Description Silicon Planar Epitaxial NPN transistor
Datasheet 2N2102 Datasheet2N2102 Datasheet (PDF)

NPN 2N2102 MEDIUM POWER AMPLIFIER & SWITCH The 2N2102 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case. They are intended for a wide variety of small-signall and medium power applications in military and industrial equipments. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCBO VCER VEBO IC PD TJ TStg Ratings Collector-Emitter Voltage (IB = 0) Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (RBE = 10 Ω) Emitter-Base Voltage Collector Current www.DataSh.

  2N2102   2N2102







Part Number 2N2102
Manufacturers NTE
Logo NTE
Description Silicon NPN Transistor
Datasheet 2N2102 Datasheet2N2102 Datasheet (PDF)

2N2102 Silicon NPN Transistor General Purpose Amplifier and Switch TO−39 Type Package Description: The 2N2102 is a silicon NPN transistor in a TO39 type package intended for a wide variety of small− signal and medium power applications in military and industrial equipment. Absolute Maximum Ratings: Collector−Base Voltage (IE = 0), VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V Collector−Emitter Voltage (IB = 0), VCEO . . . . . . . . . .

  2N2102   2N2102







Part Number 2N2102
Manufacturers CDIL
Logo CDIL
Description NPN Silicon Transistor
Datasheet 2N2102 Datasheet2N2102 Datasheet (PDF)

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR 2N2102 TO-39 Metal Can Package Amplifier Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage Collector Emitter Voltage, RBE < 10Ω Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation @ Ta=25ºC Derate Above 25ºC Power Dissipation @ Tc=25ºC Derate Above 25ºC Operating and Storage Junction Temperature Range SYMBOL VC.

  2N2102   2N2102







Part Number 2N2102
Manufacturers Motorola
Logo Motorola
Description AMPLIFIER TRANSISTOR
Datasheet 2N2102 Datasheet2N2102 Datasheet (PDF)

MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Emitter Voltage, Rgg « 10 Ohms Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous @Total Device Dissipation TA = 25°C Derate above 25°C Total Device Dissipation (a Tc = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCER VCBO VEBO 'C PD PD T J, Tst g Value 65 80 120 7.0 1.0 1.0 5.71 5.0 28.6 -65 to + 200 Unit Vdc Vdc Vdc Vdc Adc Watt mWfC Watts mW/°C °C 2N2102 CASE 79-02,.

  2N2102   2N2102







EPITAXIAL PLANAR NPN TRANSISTOR

® 2N2102 EPITAXIAL PLANAR NPN s GENERAL PURPOSE AMPLIFIER AND SWITCH DESCRIPTION The 2N2102 is a silicon Planar Epitaxial NPN )transistor in Jedec TO-39 metal case. It is t(sintended for a wide variety of small-signall and cmedium power applications in military and Produindustrial equipments. TO-39 - ObsoleteINTERNAL SCHEMATIC DIAGRAM Obsolete Product(s)ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VCER VEBO IC Ptot Tstg Tj Parameter Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (IB = 0) Collector-Emitter Voltage (RBE ≤ 10Ω) Emitter-Base Voltage (IC = 0) Collector Current Total Dissipation at Tamb ≤ 25 oC at TC ≤ 25 oC Storage Temperature Max. Operating Junction Temperature Value 120 65 80 7 1 1 5 -65 to 175 175 Unit V V V V A W W oC oC December 2002 1/4 2N2102 THERMAL DATA Rthj-case Thermal Resistance Junction-Case Rthj-amb Thermal Resistance Junction-Ambient Max Max 30 oC/W 150 oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified.


2005-05-28 : MBL82C43    CD1379CP    MTA1163    MTA1164    MTA1N60E    27128    272.001    272.002    272.003    272.004   


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