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Transistor. 2N2222A Datasheet |
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2N2219A
® 2N2222A
HIGH SPEED SWITCHES
PRELIMINARY DATA
DESCRIPTION
The 2N2219A and 2N2222A are silicon Planar
Epitaxial NPN transistors in Jedec TO-39 (for
2N2219A) and in Jedec TO-18 (for 2N2222A)
)metal case. They are designed for high speed
t(sswitching application at collector current up to
c500mA, and feature useful current gain over a
uwide range of collector current, low leakage
Prodcurrents and low saturation voltage.
TO-18
TO-39
- ObsoleteINTERNAL SCHEMATIC DIAGRAM
solete Product(s)ABSOLUTE MAXIMUM RATINGS
ObSymbol
Parameter
Value
Unit
VCBO Collector-Base Voltage (IE = 0)
75 V
VCEO Collector-Emitter Voltage (IB = 0)
40 V
VEBO Emitter-Base Voltage (IC = 0)
6V
IC Collector Current
0.6 A
ICM Collector Peak Current (tp < 5 ms)
Ptot Total Dissipation at Tamb ≤ 25 oC
for 2N2219A
for 2N2222A
at TC ≤ 25 oC
for 2N2219A
for 2N2222A
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
0.8
0.8
0.5
3
1.8
-65 to 175
175
A
W
W
W
W
oC
oC
February 2003
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2N2219A / 2N2222A
THERMAL DATA
Rthj-case Thermal Resistance Junction-Case
Rthj-amb Thermal Resistance Junction-Ambient
Max
Max
TO-39
50
187.5
TO-18
83.3
300
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
ICBO
Collector Cut-off
Current (IE = 0)
VCB = 60 V
VCB = 60 V Tj = 150 oC
10 nA
10 µA
ICEX Collector Cut-off
Current (VBE = -3V)
t(s)IBEX Base Cut-off Current
(VBE = -3V)
ucIEBO
Emitter Cut-off Current
(IC = 0)
rodV(BR)CBO Collector-Base
Breakdown Voltage
P(IE = 0)
teV(BR)CEO∗ Collector-Emitter
leBreakdown Voltage
(IB = 0)
ObsoV(BR)EBO
Emitter-Base
Breakdown Voltage
(IC = 0)
-VCE(sat)∗ Collector-Emitter
)Saturation Voltage
t(sVBE(sat)∗ Base-Emitter
cSaturation Voltage
uhFE∗ DC Current Gain
solete Prodhfe∗ Small Signal Current
Ob Gain
VCE = 60 V
VCE = 60 V
VEB = 3 V
IC = 10 µA
IC = 10 mA
IE = 10 µA
IC = 150 mA IB = 15 mA
IC = 500 mA IB = 50 mA
IC = 150 mA IB = 15 mA
IC = 500 mA IB = 50 mA
IC = 0.1 mA
IC = 1 mA
IC = 10 mA
IC = 150 mA
IC = 500 mA
IC = 150 mA
IC = 10 mA
Tamb = -55 oC
VCE = 10 V
VCE = 10 V
VCE = 10 V
VCE = 10 V
VCE = 10 V
VCE = 1 V
VCE = 10 V
IC = 1 mA VCE = 10 V f = 1KHz
IC = 10 mA VCE = 10 V f = 1KHz
75
40
6
0.6
35
50
75
100
40
50
35
50
75
10 nA
20 nA
10 nA
V
V
V
0.3 V
1V
1.2 V
2V
300
300
375
fT Transition Frequency IC = 20 mA VCE = 20 V
300 MHz
f = 100 MHz
CEBO
Emitter-Base
Capacitance
IC = 0 VEB = 0.5 V f = 100KHz
25 pF
CCBO
Collector-Base
Capacitance
IE = 0 VCB = 10 V f = 100 KHz
8 pF
Re(hie) Real Part of Input
Impedance
IC = 20 mA
f = 300MHz
* Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 %
VCE = 20 V
60 Ω
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