Part Number 2N2222A
Manufacturer SEMICOA
Title Silicon NPN Transistor
Description SEMICOA Corporation offers: • Screening and processing per MIL-PRF-19500 Appendix E • JAN level (2N2222AJ) • JANTX level (2N2222AJX) • JANTXV leve...
• Hermetically sealed TO-18 metal can
• Also available in chip configuration
• Chip geometry 0400
• Reference document: MIL-PRF-19500/255 Benefits
• Qualification Levels: JAN, JANTX, JANTXV, JANS and JANSR
• Radiation testing available TC = 25°C unless otherwise specified Rating Unit 50 Volts ...

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2N2222A : 2N2222 / 2N2222A NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range 2N2222 2N2222A 2N2222 2N2222A 2N2222 2N2222A Symbol VCBO VCEO VEBO IC Ptot Tj Tstg Value 60 75 30 40 5 6 600 625 150 - 55 to + 150 Unit V V V mA mW OC OC SEMTECH ELECT.

2N2222A : 2N2222A Small Signal Switching Transistor NPN Silicon Features • MIL−PRF−19500/255 Qualified • Available as JAN, JANTX, and JANTXV MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Characteristic Symbol Value Unit Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Total Device Dissipation @ TC = 25°C Operating and Storage Junction Temperature Range VCEO VCBO VEBO IC PT PT TJ, Tstg 50 75 6.0 800 500 1.0 −65 to +200 Vdc Vdc Vdc mAdc mW W °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 325 °C/W Thermal Resistance, Junction to Case RqJC.

2N2222A : MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • High current (max.800mA) • Low voltage (max.40V) • Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates RoHS Compliant. See ordering information) Maximum Ratings Symbol Rating VCEO Collector-Emitter Voltage 2N2222 2N2222A VCBO Collector-Base Voltage 2N2222 2N2222A VEBO Emitter-Base Voltage 2N2222 2N2222A IC Collector Current (DC) ICM Peak Collector Current IBM Peak Base Current TJ Operating Junction Temperature TSTG Storage Temperature Thermal Characteristics Rating 30 40 60 75 5.0 6.0 800 800 200 -.

2N2222A : TECHNICAL DATA NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/255 Devices 2N2221A 2N2221AL 2N2221AUA 2N2221AUB Qualified Level JAN JANTX JANTXV JANS JANHC 2N2222A 2N2222AL 2N2222AUA 2N2222AUB MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C 2N2221A, L; 2N2222A, L (1) 2N2221AUA; 2N2222AUA (2) 2N2221AUB; 2N2222AUB (1) Operating & Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PT Top, Tstg Symbol RθJA All Types 50 75 6.0 800 0.5 0.65 0.50 -65 to +200 Max. 325 210 325 Unit Vdc Vdc Vdc mAdc W TO-18* (TO-206AA) 2N2221A, 2N2222A 0 C THERMAL CHARACTERISTICS Characte.

2N2222A : DISCRETE SEMICONDUCTORS DATA SHEET M3D125 2N2222; 2N2222A NPN switching transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 29 Philips Semiconductors Product specification NPN switching transistors FEATURES • High current (max. 800 mA) • Low voltage (max. 40 V). APPLICATIONS • Linear amplification and switching. DESCRIPTION NPN switching transistor in a TO-18 metal package. PNP complement: 2N2907A. 3 2N2222; 2N2222A PINNING PIN 1 2 3 emitter base collector, connected to case DESCRIPTION handbook, halfpage 1 3 2 MAM264 2 1 Fig.1 Simplified outline (TO-18) and symbol. QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collect.

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