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2N2222A Transistor Datasheet PDFSmall Signal Switching Transistor Small Signal Switching Transistor |
Part Number | 2N2222A |
---|---|
Description | Small Signal Switching Transistor |
Feature | 2N2222A
Small Signal Switching Transistor
NPN Silicon
Features
• MIL−PRF−19500/255 Qualified • Available as JAN, JANTX, and JANTXV MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Characteristic Symbol Value Unit Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Total Device Dissipation @ TC = 25°C Operating and Storage Junction Temperature Range VCEO VCBO VEBO IC PT PT TJ, Tstg 50 75 6. 0 800 500 1. 0 −65 to +200 Vdc Vdc Vdc mAdc mW W °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit . |
Manufacture | ON Semiconductor |
Datasheet |
Part Number | 2N2222A |
---|---|
Description | Small Signal Switching Transistor |
Feature | 2N2222A
Small Signal Switching Transistor
NPN Silicon
Features
• MIL−PRF−19500/255 Qualified • Available as JAN, JANTX, and JANTXV MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Characteristic Symbol Value Unit Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Total Device Dissipation @ TC = 25°C Operating and Storage Junction Temperature Range VCEO VCBO VEBO IC PT PT TJ, Tstg 50 75 6. 0 800 500 1. 0 −65 to +200 Vdc Vdc Vdc mAdc mW W °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit . |
Manufacture | ON Semiconductor |
Datasheet |
Part Number | 2N2222A |
---|---|
Description | Silicon Planar NPN Transistor |
Feature | 2N2222AHR
3
1 2
LCC-3
1 2 3
TO-18
3
4 1
2
UB
Pin 4 in UB is connected to the metallic lid. Figure 1. Internal schematic diagramI Hi-Rel 40 V, 0. 8 A NPN transistor Datasheet - production data Features Parameter BVCEO min IC (max) hFE at 10 V - 150 mA ESCC JANS 40 V 50 V 0. 8 A 100 • Hermetic packages • ESCC and JANS qualified • Up to 100 krad(Si) low dose ratee Description The 2N2222AHR is a silicon planar NPN transistor specifically designed and housed in hermetic packages for aerospace and Hi-Rel applications. It is available in the JAN qualification system (MIL-PRF19500 complia. |
Manufacture | STMicroelectronics |
Datasheet |
Part Number | 2N2222A |
---|---|
Description | Silicon Planar NPN Transistor |
Feature | 2N2222AHR
3
1 2
LCC-3
1 2 3
TO-18
3
4 1
2
UB
Pin 4 in UB is connected to the metallic lid. Figure 1. Internal schematic diagramI Hi-Rel 40 V, 0. 8 A NPN transistor Datasheet - production data Features Parameter BVCEO min IC (max) hFE at 10 V - 150 mA ESCC JANS 40 V 50 V 0. 8 A 100 • Hermetic packages • ESCC and JANS qualified • Up to 100 krad(Si) low dose ratee Description The 2N2222AHR is a silicon planar NPN transistor specifically designed and housed in hermetic packages for aerospace and Hi-Rel applications. It is available in the JAN qualification system (MIL-PRF19500 complia. |
Manufacture | STMicroelectronics |
Datasheet |
Part Number | 2N2222A |
---|---|
Description | NPN SILICON PLANAR SWITCHING TRANSISTORS |
Feature | Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR SWITCHING TRANSISTORS
2N2221A 2N2222A TO-18
Switching And Linear Application DC And VHF Amplifier Applications
ABSOLUTE MAXIMUM RATINGS DESCRIPTION
SYMBOL
2N2221A,22A
Collector -Emitter Voltage
VCEO
40
Collector -Base Voltage
VCBO
75
Emitter -Base Voltage
VEBO
6. 0 Collector Current Continuous IC 800 Power Dissipation @Ta=25 degC PD 500 Derate Above 25deg C 2. 28 @ Tc=25 degC PD 1. 2 Derate Above 25deg C 6. 85 Operating And Storage Junction Tj, Tstg -65 to +20. |
Manufacture | CDIL |
Datasheet |
Part Number | 2N2222A |
---|---|
Description | NPN SILICON PLANAR SWITCHING TRANSISTORS |
Feature | Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR SWITCHING TRANSISTORS
2N2221A 2N2222A TO-18
Switching And Linear Application DC And VHF Amplifier Applications
ABSOLUTE MAXIMUM RATINGS DESCRIPTION
SYMBOL
2N2221A,22A
Collector -Emitter Voltage
VCEO
40
Collector -Base Voltage
VCBO
75
Emitter -Base Voltage
VEBO
6. 0 Collector Current Continuous IC 800 Power Dissipation @Ta=25 degC PD 500 Derate Above 25deg C 2. 28 @ Tc=25 degC PD 1. 2 Derate Above 25deg C 6. 85 Operating And Storage Junction Tj, Tstg -65 to +20. |
Manufacture | CDIL |
Datasheet |
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