2N722 (SILICON)
(2N1132 JAN AVAILABLE)
2Nl132 2Nl132A 2N2303
PNPSILICON SWITCHING TRANSISTORS
PNP SILICON ANNULAR TRAN...
2N722 (SILICON)
(2N1132 JAN AVAILABLE)
2Nl132 2Nl132A 2N2303
PNPSILICON SWITCHING TRANSISTORS
PNP SILICON ANNULAR TRANSISTORS ... designed for medium-current switching and amplifier applications.
MAXIMUM RATINGS
Rating
Symbol 2N722 2N1132 2N1132A 2N2303 Unit
Collector-Emitter
Voltage
VCEO 35
35
40
35 Vdc
Collector-Emitter
Voltage (RBE 10 Ohms)
VCER 50
50
50
Vdc 50
Collector-Base
Voltage Emitter-Base
Voltage Collector Current
T~~~a~:~~v~;:j~atlon @TA = 25°C
VCB VEB
IC PD
Total Device Dissipation@Tc=2SoC Derate above 25° C
Operating Junction Temperature Range
Storage Temperature Range
PD TJ .Tstg
50
5.0
-
400 2.67 1.5 10
50 60
5.0 5.0
- 600
600 600 4.0 4.0
2.0 13.3
2.0 13.3
-65 to +175
-65 to +300
50 Vdc
5.0 Vdc
500 mAde
600 mW 4.0 mW/"C 2.0 Watts 13.3 mWiC
'c
·c
J
CASE 22
(TO-IS)
2N722
2N1132 2N1132A 2N2303
0.200
TO·' OUTLINE (Collector internally connected to case)
1 hr1 :,[0o0.1m95 01.
~--tW11 0.210
n nO.016 DIA u-1.0.019
U
.500
MIN
0.100
...