DATA SHEET
2N2411 2N2412 PNP SILICON TRANSISTOR JEDEC TO-18 CASE
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N2411, 2N2412...
DATA SHEET
2N2411 2N2412 PNP SILICON TRANSISTOR JEDEC TO-18 CASE
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N2411, 2N2412 types are PNP Saturated Switching Transistors designed for high speed switching applications.
MAXIMUM RATINGS: SYMBOL
Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Collector Current Power Dissipation Power Dissipation (TC=25°C) Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance VCBO VCEO VEBO IC PD PD TJ,Tstg ΘJA ΘJC 25 15 5.0 100 0.5 1.2 -65 to +200 350 146
UNITS
V V V mA W W °C °C/W °C/W
ELECTRICAL CHARACTERISTICS: SYMBOL
ICES ICES IEBO BVCBO BVCEO VCE(SAT) VBE(SAT) hFE hFE hFE hFE hfe Cob Cib
TEST CONDITIONS
VCE=15V VCE=15V, TA=150°C VEB=5.0V IC=10µA IC=10mA IC=10mA, IB=1.0mA IC=10mA, IB=1.0mA VCE=0.5V, IC=50µA VCE=0.5V, IC=10mA VCE=0.5V, IC=10mA, TA=-55°C VCE=1.0V, IC=50mA VCE=10V, IC=10mA, f=100MHz VCB=5.0V, IE=0, f=1.0MHz VEB=0.5V, IC=0, f=1.0MHz
2N2411 MIN MAX
10 10 25 15 0.7 10 20 10 1.4 5.0 8.0 0.2 0.9 60 10
2N2412 MIN MAX
10 10 10 25 15 0.7 20 40 20 1.4 5.0 8.0 0.2 0.9 120 20
UNITS
nA µA µA V V V V
pF pF
(CONTINUED ON REVERSE SIDE) R0
2N2411 / 2N2412 ELECTRICAL CHARACTERISTICS (Continued) SYMBOL
td tr ton ts tf toff
PNP SILICON TRANSISTOR
TEST CONDITIONS
VBE(off)=1.2V, IC=10mA, IB1=2.5mA, RL=300Ω VBE(off)=1.2V, IC=10mA, IB1=2.5mA, RL=300Ω VBE(off)=1.2V, IC=10mA, IB1=2.5mA, RL=300Ω IC=10mA, IB1=2.5mA, IB2=2.0mA, RL=300Ω IC=10mA, IB1=2.5mA, IB2=2.0mA, RL=300Ω IC=10mA, IB1=2.5mA, IB2=2...