2N2647 Datasheet PDF
Transistor
- 2N2647 | Multicomp
- Transistor
- Transistor
Unijunction
1. Emitter 2. Base 1 3. Base 2
Description:
A PN Unijunction Transistor desi.
- Transistor
Unijunction
1. Emitter 2. Base 1 3. Base 2
Description:
A PN Unijunction Transistor designed for use in pulse and timing circuits, sensing circuits, and thyristor trigger circuits.
Features:
• Low peak point current: 2µA (Max.) • Low emitter reverse current: 200nA (Max.) • Passivated surface for reliability and uniformity
Maximum Ratings
Characteristic
Symbol
Rating
Unit
Power Dissipation (Note 1) RMS Emitter Current Peak Pul.
- 2N2647 | Digitron Semiconductors
- SILICON UNIJUNCTION TRANSISTOR
- 2N2646, 2N2647
High-reliability discrete products and engineering services since 1977
SILICON UNIJ.
- 2N2646, 2N2647
High-reliability discrete products and engineering services since 1977
SILICON UNIJUNCTION TRANSISTOR
FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Power dissipation(1)
PD 300 mW
RMS emitter current
IE(EMS)
50
mA.
- 2N2647 | Motorola
- (2N2646 / 2N2647) Silicon PN unijunction transistor
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- 2N2647 | Digitron Semiconductors
- SILICON UNIJUNCTION TRANSISTOR
- 2N2646, 2N2647
High-reliability discrete products and engineering services since 1977
SILICON UNIJ.
- 2N2646, 2N2647
High-reliability discrete products and engineering services since 1977
SILICON UNIJUNCTION TRANSISTOR
FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Power dissipation(1)
PD 300 mW
RMS emitter current
IE(EMS)
50
mA.
- 2N2647 | Multicomp
- Transistor
- Transistor
Unijunction
1. Emitter 2. Base 1 3. Base 2
Description:
A PN Unijunction Transistor desi.
- Transistor
Unijunction
1. Emitter 2. Base 1 3. Base 2
Description:
A PN Unijunction Transistor designed for use in pulse and timing circuits, sensing circuits, and thyristor trigger circuits.
Features:
• Low peak point current: 2µA (Max.) • Low emitter reverse current: 200nA (Max.) • Passivated surface for reliability and uniformity
Maximum Ratings
Characteristic
Symbol
Rating
Unit
Power Dissipation (Note 1) RMS Emitter Current Peak Pul.
- 2N2647 | Solid State
- Silicon PN Unijunction Transistor
- .
- .
- 2N2647 | Central Semiconductor
- SILICON PN UNIJUNCTION TRANSISTORS
- 2N2646 2N2647
SILICON PN UNIJUNCTION TRANSISTORS
w w w. c e n t r a l s e m i . c o m DESCRIPTION: .
- 2N2646 2N2647
SILICON PN UNIJUNCTION TRANSISTORS
w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2646 and 2N2647 devices are silicon PN Unijunction Transistors designed for general purpose industrial applications.
MARKING: FULL PART NUMBER
TO-18 (UJT) CASE
MAXIMUM RATINGS: (TA=25°C) Emitter Reverse Voltage
SYMBOL VB2E
Interbase Voltage
VB2B1
RMS Emitter Current
Ie
Peak Emitter Current (Duty Cycle ≤1%, PRR≤10.
- 2N2647 | Comset
- (2N2646 / 2N2647) SILICON UNIJONCTION TRANSISTORS
- 2N2646 2N2647
SILICON UNIJONCTION TRANSISTORS
Silicon Planar Unijunction Transistors have a structu.
- 2N2646 2N2647
SILICON UNIJONCTION TRANSISTORS
Silicon Planar Unijunction Transistors have a structure resulting in lower saturation voltage, peak-point current and valley current as well as a much higher base-one peak pulse voltage. In addition, these www.DataSheet4U.com devices are much faster switches. The 2N2646 is intended for general purpose industrial applications where circuit economy is of primary importance, and is ideal for use in firi.
