2N2905A Datasheet
Part Number |
2N2905A |
Manufacturers |
ON Semiconductor |
Logo |
|
Description |
Small Signal Switching Transistor |
Datasheet |
2N2905A Datasheet (PDF) |
2N2905A
Small Signal Switching Transistor
PNP Silicon
Features
• MIL−PRF−19500/290 Qualified • Available as JAN, JANTX, and JANTXV
MAXIMUM RATINGS
Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Total Device Dissipation @ TC = 25°C Operating and Storage Junction Temperature Range
Symbol Value
VCEO
−60
VCBO
−60
VEBO IC
−5.0 −600
PT 800
PT 3.0
TJ, Tstg −65 to +200
Unit Vdc Vdc Vdc mAdc mW W °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient RqJA
195 °C/W
Thermal Resistance, Junction−to−Case
RqJC
50 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D111
2N2905; 2N2905A PNP switching transistors
Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 28
Philips Semiconductors
Product specification
PNP switching transistors
FEATURES • High current (max. 600 mA) • Low voltage (max. 60 V). APPLICATIONS • High-speed switching • Driver applications for industrial service.
1 handbook, halfpage
2N2905; 2N2905A
PINNING PIN 1 2 3 emitter base collector, connected to case DESCRIPTION
DESCRIPTION PNP switching transistor in a TO-39 metal package. NPN complements: 2N2219 and 2N2219A.
3
2 2
3
MAM318
1
Fig.1
Simplified outline (TO-39) and.
Part Number |
2N2905A |
Manufacturers |
Central Semiconductor |
Logo |
|
Description |
PNP SILICON TRANSISTORS |
Datasheet |
2N2905A Datasheet (PDF) |
2N2904 2N2904A 2N2905 2N2905A
PNP SILICON TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2904, 2N2905 series types are PNP silicon transistors manufactured by the epitaxial planar process, designed for small signal, general purpose and switching applications.
MARKING: FULL PART NUMBER
TO-39 CASE
MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Continuous Collector Current
IC
Power Dissipation
PD
Power Dissipation (TC=25°C)
PD
Operating and Storage Junction Temperature
TJ, Tstg
2N2904 2N2905
60
2N2904A 2N2905A
60
40 60
5.0
0.6
0.8
3.0
.
2N2905A Silicon PNP Transistor Small−Signal Switching TO−39 Type Package
Absolute Maximum Ratings:
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Total Device Dissipation, PD.
Part Number |
2N2905A |
Manufacturers |
Microsemi Corporation |
Logo |
|
Description |
PNP SWITCHING SILICON TRANSISTOR |
Datasheet |
2N2905A Datasheet (PDF) |
2N2904(A) and 2N2905(A)
Available on commercial
versions
PNP SWITCHING SILICON TRANSISTOR
Qualified per MIL-PRF-19500/290
Qualified Levels: JAN, JANTX, JANTXV
and JANS
DESCRIPTION
This family of 2N2904 and 2N2905A switching transistors are military qualified up to the JANS level for high-reliability applications. These devices are also available in a TO-5 package. Microsemi also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through-hole and surface-mount packages.
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES • JEDEC registered 2N2904 through 2N2905A series.
Part Number |
2N2905A |
Manufacturers |
Multicomp |
Logo |
|
Description |
General Purpose Transistor |
Datasheet |
2N2905A Datasheet (PDF) |
2N2905A
General Purpose Transistor
High Speed Switching
Features:
• PNP Silicon Planar Switching Transistor. • Fast switching devices exhibiting short turn-off and low saturation voltage characteristics. • Switching And Linear Application DC to VHF Amplifier Applications.
TO-39 Metal Can Package
Dimensions
A B C D E F G H J K L
Minimum
8.50 7.74 6.09 0.40
2.41 4.82 0.71 0.73 12.70 42°
Maximum
9.39 8.50 6.60 0.53 0.88 2.66 5.33 0.86 1.02
48° Dimensions : Millimetres
Pin Configuration 1. Emitter 2. Base 3. Collector
Page 1
31/05/05 V1.0
2N2905A
General Purpose Transistor
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collecto.
Small Signal Switching Transistor
2N2905A
Small Signal Switching Transistor
PNP Silicon
Features
• MIL−PRF−19500/290 Qualified • Available as JAN, JANTX, and JANTXV
MAXIMUM RATINGS
Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Total Device Dissipation @ TC = 25°C Operating and Storage Junction Temperature Range
Symbol Value
VCEO
−60
VCBO
−60
VEBO IC
−5.0 −600
PT 800
PT 3.0
TJ, Tstg −65 to +200
Unit Vdc Vdc Vdc mAdc mW W °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient RqJA
195 °C/W
Thermal Resistance, Junction−to−Case
RqJC
50 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
2018-11-30 : CRR0240 J113A J111A J112A DPAD100 DPAD50 DPAD20 DPAD10 DPAD5 DPAD2