2N2920 2N2920A
SILICON DUAL NPN TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR...
2N2920 2N2920A
SILICON DUAL NPN TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2920 and 2N2920A are dual silicon NPN transistors manufactured by the epitaxial planar process utilizing two individual chips mounted in a hermetically sealed metal case designed for differential amplifier applications.
MARKING: FULL PART NUMBER
TO-78 CASE
MAXIMUM RATINGS: (TA=25°C) Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Continuous Collector Current Power Dissipation (One Die) Power Dissipation (Both Dice) Power Dissipation (One Die, TC=25°C) Power Dissipation (Both Dice, TC=25°C) Operating and Storage Junction Temperature
SYMBOL VCBO VCEO VEBO IC PD PD PD PD TJ, Tstg
60 60 6.0 30 300 500 750 1.5 -65 to +200
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN MAX
ICBO
VCB=45V
2.0
ICEO
VCE=5.0V
2.0
IEBO
VEB=5.0V
2.0
BVCBO
IC=10μA
60
BVCEO
IC=10mA
60
BVEBO
...
