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2N3053

Seme LAB

MEDIUM POWER SILICON NPN PLANAR TRANSISTOR

2N3053 MECHANICAL DATA Dimensions in mm (inches) 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) MEDIUM POWER SILICO...


Seme LAB

2N3053

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2N3053 MECHANICAL DATA Dimensions in mm (inches) 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) MEDIUM POWER SILICON NPN PLANAR TRANSISTOR 4.19 (0.165) 4.95 (0.195) FEATURES 12.70 (0.500) min. 0.89 max. (0.035) 7.75 (0.305) 8.51 (0.335) dia. VCEO = 40V 5.08 (0.200) typ. IC Ptot 2.54 (0.100) = 0.7A = 5W 2 1 0.66 (0.026) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 3 45˚ TO39 PACKAGE Underside View Pin 1 = Emitter Pin 2 = Base Pin 3 = Collector ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO VCEO VCER VCEX VEBO IC PTOT Tj Tstg Rth(jc) Rth(ja) Semelab plc. Collector – Base Voltage Collector – Emitter Voltage Collector – Emitter Sustaining Voltage Collector - Emiiter Voltage Emitter-Base Voltage Collector Current Power Dissipation Tamb = 25°C Tcase = 25°C Junction Temperature Storage Temperature Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk 60V 40V 50V 60V 5V 0.7A 1W 5W 200°C –65 to 200°C 35°C / W 175°C / W Prelim.01/01 2N3053 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter VCEO(SUS) V(BR)CBO* V(BR)EBO* ICBO IEBO VCE(sat)* VBE(sat)* h21E* fT C22b C11b Collector – Emitter Voltage Collector – Base Breakdown Voltage Emitter – Base Breakdown Voltage Collector – Base Cut-off Current Emitter - Base Cut-off Current Base – Emitter Saturation Voltage Static Forward Current Transfer ...




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