2N3263

File No. 54 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __ oornLJiJ Power Transistors Solid State Division 2N3263 2N3264 2N3265 2N3266 ~ H-1354 ~3263.2N3264 IRADIAL) .11 y . . .H-1785 J 2N3265:2N3266 IJEDEC TO-631 High-Power,High-Speed, High-Current Silicon N-P-N Power Transistors Epitaxial Types for Aerospace, Military, and Industrial Applications Features: Low saturation voltages - 2N3263 and 2N3265 VCE(sad = 0.75 V (max.) at IC = 15 A VBE(sat) = 1.60 V (max.) at IC = 15 A 2N3264 and 2N3266 = =vCE (sad 1.20 V (max.) at Ic 15 A VBE (sat) = 1_80 V (max.) at IC = 15 A High reliability and uniformity of characteristics High power dissipation Fast rise time at high collector current - 0.2/1s at 10 A (typical) RCA-2N3263, 2N3264, 2N3265, and 2N3266a are n-p-n epitaxial silicon power transistors designed for high-reliability aerospace, military, and industrial equipment. Their high current-handling capability and fast switching speed make them...