2N3287 thru 2N3290 (SILICON)
CASE 20
(TO·72)
NPN silicon annular transistors for high-gain, lownoise amplifier, oscill...
2N3287 thru 2N3290 (SILICON)
CASE 20
(TO·72)
NPN silicon annular transistors for high-gain, lownoise amplifier, oscillator, mixer and frequency multiplier applications.
MAXIMUM RATINGS
Rating
Collector - Base
Voltage Collector - Emitter
Voltage Collector - Emitter
Voltage Emitter - Base
Voltage Collector Current
Symbol
VCB VCES VCEO VEB
IC
2N3287 2N3288
40 40 20 3.0 50
2N3289 2N3290
30 30 15 3.0 50
Unit
Volts Volts Volts Volts rnA
Power Dissipation at 25°C Case Above 25°C derate 1. 71 mW/oC
Power Dissipation at 25° C ambo Above 25°C derate 1. 14 mW;oC
PD PD
300 300 mW 200 200 mW
Junction Temperature Storage Temperature Range
TJ , Tstg
+200
+200
°C
-65 to +200 -65 to +200 °C
200 MH % TEST CIRCUIT: POWER GAIN, NOISE FIGURE, &AGC
RL =500
ll,6 turns of #16 tinned wire; %" 10; Air wound; winding length 3,4";
Vccfeeds tap 4% turns from collector end; output tap 3'12 turns from collector end.
T1,3 turns primary and secondary Bifilar wound (close wound) on '14" ceram...
