32972N (SILICON)
NPN silicon annular transistor for linear amplifier applications for 2 to 100 MHz.
CASE 1
(TO·3)
Colle...
32972N (SILICON)
NPN silicon annular transistor for linear amplifier applications for 2 to 100 MHz.
CASE 1
(TO·3)
Collector connected to case
MAXIMUM RATINGS.
Rating
Collector-Base
Voltage Collector- Emitter
Voltage Emitter-Base
Voltage Collector Current (Continuous) Base-Current (Continuous) Power Input (PEP)
Power Output (PEP) Total Device Dissipation @ 25°C Case Temperature Derating Factor above 25°C
Junction Temperature
Storage Temperature Range
Symbol
VCB VCES VEB
IC
ls
Pin Pout PD
TJ Tstg
Value
60 60
3.0
1.5 500 5.0 20.0
Unit
Vdc Vdc Vdc Adc mAdc Watts (PEP) Watts (PEP)
25.0 167
175 -65 to +175
Watts mW;oC
°c °C
The maximum ratlnp u given for de conditions can be exceeded on a pulae baala. See electrical characterlstica
2-479
2N3297 (Continued)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Collector-Emitter Sustain
Voltage
Symbol
Conditions
V \11 CES(sus)
It = 0.250A,
RBE =0
Collector Emitter-Open
V 111 CEO(sus)
IC = 0...
