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2N3298 Datasheet

Part Number 2N3298
Manufacturers Motorola
Logo Motorola
Description NPN silicon annular transistor
Datasheet 2N3298 Datasheet2N3298 Datasheet (PDF)

2N3298 (SILICON) CASE 22 (TO.IS) NPN silicon annular transistor for power oscillator applications to 150 MHz. Collector connected to ces. MAXIMUM RATINGS Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Device Dissipation (25°C Case Temperature) Derate Above 25°C Total Device Dissipation (25°C Ambient Temperature) Derate Above 25°C 2mW/oC Junction Temperature Storage Temperature Range Symbol VCB VCES VEB IC PD PD TJ Tstg Value 25 25 3.0 10.

  2N3298   2N3298






Part Number 2N3299
Manufacturers Motorola
Logo Motorola
Description GENERAL PURPOSE TRANSISTOR
Datasheet 2N3298 Datasheet2N3299 Datasheet (PDF)

2N3299 2N3300 CASE 79, STYLE 1 TO-39 (TO-205AD) GENERAL PURPOSE TRANSISTOR 2N3301 2N3302 MAXIMUM RATINGS Rating Collector-Emitter Voltage (Applicable to 10 mAdc) Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Symbol VCEO VCBO VEBO ic Value 30 60 5.0 500 CASE 22, STYLE 1 TO-18 (TO-206AA) GENERAL PURPOSE TRANSISTOR NPN SILICON @Total Device Dissipation TA = 2F°C Derate above 25°C @Total Device Dissipation Tc = 25°C Derate above 25°C Operating and Storage Junction .

  2N3298   2N3298







Part Number 2N3299
Manufacturers Central
Logo Central
Description Small Signal Transistors
Datasheet 2N3298 Datasheet2N3299 Datasheet (PDF)

Small Signal Transistors TO-39 Case (Continued) TYPE NO. DESCRIPTION VCBO (V) VCEO (V) *VCER VEBO (V) ICBO @ VCB (µA) (V) *ICEO **ICES ***ICEV ****ICER MIN 5.0 5.0 5.0 5.0 5.0 5.0 4.0 5.0 5.0 5.0 5.0 5.0 5.0 7.0 7.0 5.0 4.0 7.0 7.0 7.0 7.0 5.0 4.0 4.0 5.0 4.0 4.0 4.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 6.0 6.0 6.0 7.0 7.0 0.10 0.10 0.50 0.50 0.10 0.10 -0.10 0.025 0.025 --0.20 0.10 0.10 0.25 0.01** 0.01** 0.01* 0.01* 0.01* 10 50 0.01* -0.50 0.50 0.50 0.50 0.50 0.50 0.50 0.01** 0.01** 0.10 -0.50*** 0.50**.

  2N3298   2N3298







Part Number 2N3297
Manufacturers Motorola
Logo Motorola
Description NPN silicon annular transistor
Datasheet 2N3298 Datasheet2N3297 Datasheet (PDF)

32972N (SILICON) NPN silicon annular transistor for linear amplifier applications for 2 to 100 MHz. CASE 1 (TO·3) Collector connected to case MAXIMUM RATINGS. Rating Collector-Base Voltage Collector- Emitter Voltage Emitter-Base Voltage Collector Current (Continuous) Base-Current (Continuous) Power Input (PEP) Power Output (PEP) Total Device Dissipation @ 25°C Case Temperature Derating Factor above 25°C Junction Temperature Storage Temperature Range Symbol VCB VCES VEB IC ls Pin Pout PD TJ T.

  2N3298   2N3298







Part Number 2N3296
Manufacturers Motorola
Logo Motorola
Description NPN silicon annular transistor
Datasheet 2N3298 Datasheet2N3296 Datasheet (PDF)

2N3296 (SILICON) NPN silicon annular transistor for linear amplifier applications from 2 to 100 MHz. (10-102) Collector connected to case; stud isolated from case MAXIMUM RATINGS (Note 1) Rating Collector-Base Voltage Symbol VCB Value 60 Unit Vdc Collector-Emitter Voltage VCES 60 Vdc Emitter-Base Voltage VEB 3.0 Vdc Collector Current (Continuous) IC 700 mAdc Base Current (Continuous) IB 100 mAdc RF Input Power (Note 2) RF Output Power (Note 2) P. 10 Pout 1.0 Watt (PEP) 5.0 .

  2N3298   2N3298







NPN silicon annular transistor

2N3298 (SILICON) CASE 22 (TO.IS) NPN silicon annular transistor for power oscillator applications to 150 MHz. Collector connected to ces. MAXIMUM RATINGS Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Device Dissipation (25°C Case Temperature) Derate Above 25°C Total Device Dissipation (25°C Ambient Temperature) Derate Above 25°C 2mW/oC Junction Temperature Storage Temperature Range Symbol VCB VCES VEB IC PD PD TJ Tstg Value 25 25 3.0 100 1.0 6.67 0.3 2.0 +175 -65 to +175 Unit Vdc Vdc Vdc mA Watt mWrC Watt mW/oC °c °c 80 MHz OSCILLATOR POWER OUTPUT TEST CIRCUIT 16K RFC 2N3298 15 pF 2.7K 12 pF ~ R' SOU BOLOMETER l, - 4 TURNS #22 WIRE ON 'I•• COIL FORM -12V o-----e----..JV'.2.0U,.,..---.... 2-482 2N3298 (Continued) ELECTRICAL CHARACTERISTICS (TA =25°C unless otherwise notedl Characteristic Symbol Conditions Min Typ Max Unit Collector-Emitter Breakdown Voltage Collector- Emitter Open Base Sustaining Volta.


2018-11-06 : C1015    2SC1015    BSS138    2N3296    2N3295    2N3294    2N3289    2N3290    2N3291    2N3292   


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