2N3303 (SILICON)
NPN silicon annular transistor designed for highspeed, high-current switching and driving applications...
2N3303 (SILICON)
NPN silicon annular transistor designed for highspeed, high-current switching and driving applications.
CASE 94 Collector connected to case MAXIMUM RATINGS
Rating
Symbol Value Unit
Collector-Emitter
Voltage
VCEO
12 Vdc
Collector-Base
Voltage
VCB
25 Vdc
Emitter-Base
Voltage
VEB 4.0 Vdc
Collector Current-Continuous
Total Device Dissipation @ TA =25"C
Derate above 25°C
Total Device Dissipation @ TC =25°C
Derate above 25 °C
Operating and Storage Junction Temperature Range
IC 1.0 Adc
PD PD TJ , Tstg
0.6 Watt 3.43 mW/"C
3.0 Watts
17.2 mW/"C
-65 to +200
°c
ELECTRICAL CHARACTERISTICS ITA = 250C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
(IeCollector-Emitter
Voltage· = 30 mAde, IB = 0)
Collector-Base Breakdown
Voltage (IC = 0.5 mAde, IE = 0)
('E IeEmitter-Base Breakdown
Voltage = O. 1 mAde, =0)
Collector Cutclff Current· (VCE = 15 Vde, VBE = 0)
Base Current (VeE = 15 Vde, VBE = 0)
.Pulse Test: Pulse Width = 300 /LS, Duty Cycle :S. 2%
2-...
