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2N331 Datasheet

Part Number 2N331
Manufacturers Motorola
Logo Motorola
Description PNP Transistor
Datasheet 2N331 Datasheet2N331 Datasheet (PDF)

2N331 (Germanium) CASE 31(1) (TO·S) All leads isolated PNP germanium transistor for audio range amplifier and switching service in military equipment. Have collector dissipation and storage temperature ratings significantly higher than those of the military specification (see maximum ratings table below). MAXIMUM RATINGS Rating Collector-Base Voltage Emitter-Base Voltage Storage Temperature storage Temperature Collector Dissipation at TA =25°C (MIL-S-19500!4C (Derate 1.25 mW;oC above 25°C) Co.

  2N331   2N331






Part Number 2N3398
Manufacturers Central Semiconductor
Logo Central Semiconductor
Description SILICON NPN TRANSISTORS
Datasheet 2N331 Datasheet2N3398 Datasheet (PDF)

2N3395 2N3396 2N3397 2N3398 SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3395 series are silicon NPN transistors designed for low level, low noise amplifier applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg 25 25.

  2N331   2N331







Part Number 2N3397
Manufacturers Central Semiconductor
Logo Central Semiconductor
Description SILICON NPN TRANSISTORS
Datasheet 2N331 Datasheet2N3397 Datasheet (PDF)

2N3395 2N3396 2N3397 2N3398 SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3395 series are silicon NPN transistors designed for low level, low noise amplifier applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg 25 25.

  2N331   2N331







Part Number 2N3396
Manufacturers Central Semiconductor
Logo Central Semiconductor
Description SILICON NPN TRANSISTORS
Datasheet 2N331 Datasheet2N3396 Datasheet (PDF)

2N3395 2N3396 2N3397 2N3398 SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3395 series are silicon NPN transistors designed for low level, low noise amplifier applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg 25 25.

  2N331   2N331







Part Number 2N3395
Manufacturers Central Semiconductor
Logo Central Semiconductor
Description SILICON NPN TRANSISTORS
Datasheet 2N331 Datasheet2N3395 Datasheet (PDF)

2N3395 2N3396 2N3397 2N3398 SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3395 series are silicon NPN transistors designed for low level, low noise amplifier applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg 25 25.

  2N331   2N331







Part Number 2N3394
Manufacturers GE Solid State
Logo GE Solid State
Description (2N3390 - 2N3394) SILICON TRANSISTORS
Datasheet 2N331 Datasheet2N3394 Datasheet (PDF)

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  2N331   2N331







PNP Transistor

2N331 (Germanium) CASE 31(1) (TO·S) All leads isolated PNP germanium transistor for audio range amplifier and switching service in military equipment. Have collector dissipation and storage temperature ratings significantly higher than those of the military specification (see maximum ratings table below). MAXIMUM RATINGS Rating Collector-Base Voltage Emitter-Base Voltage Storage Temperature storage Temperature Collector Dissipation at TA =25°C (MIL-S-19500!4C (Derate 1.25 mW;oC above 25°C) Collector Dissipation at TA = 25°C (JAN 2N331) (Derate 2.67 mW;oC above 25°C) Symbol VCB VEB Tstg Tstg PD Value 30 12 -65 to + 85 -65 to + 100 75 PD 200 Unit Volts Volts °c °c mW mW ELECTRICAL CHARACTERISTICS (TC =2SoC unless otherwise noted) Characteristics Symbol Min Max Emitter Cutoff Current (VEB =-12 Vdc, IC = 0) Collector Cutoff Current (VCB = -30 Vdc, ~ = 0) Small-Signal Open-Circuit Output Admittance (VCB =-6 Vdc, ~ = 1.0 mAdc, f =1 kHz) Small-Signal Short-Circuit Input Impe.


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