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2N3375 Datasheet

Part Number 2N3375
Manufacturers Advanced Semiconductor
Logo Advanced Semiconductor
Description NPN SILICON RF POWER TRANSISTOR
Datasheet 2N3375 Datasheet2N3375 Datasheet (PDF)

2N3375 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2N3375 is Designed for Class A,B,C Amplifier,Oscillator and Driver Applications Covering the VHF-UHF Region. PACKAGE STYLE TO- 60(ISOLATED) FEATURES INCLUDE: • Isolated Package MAXIMUM RATINGS IC VCE PDISS TJ TSTG θJC O O 1.5 A 40 V 11.6 W @ TC = 25 C -65 C to +200 C -65 C to +200 C 15 C/W O O O O 1 = EMITTER 2 = BASE 3 = COLLECTOR CHARACTERISTICS SYMBOL BVCEO BVCEX BVCBO ICEO IEBO hFE VCE(SAT) Cob ft Pout GP η TC = 25 C O TE.

  2N3375   2N3375






Part Number 2N3375
Manufacturers Motorola
Logo Motorola
Description NPN silicon RF Power transistors
Datasheet 2N3375 Datasheet2N3375 Datasheet (PDF)

2N3375(SILlCON) 2N3553 2N3632 2N 3961 •CASE 79 (10·39) 2N3553 ·'·CASE 24 (10·102) 2N3961 * Collector Connected "·CASE 36 (10·60) to Case .. Collector electrically connected to case; stud electrically 2N3375 isolated from case 2N3632 *•• Stud electrically Isolated from case NPN silicon RF Power transistors, optimized for large-signal power amplifier and driver applications to 400MHz, provide wide choice of power levels and guaranteed safe operating areas. MAXIMUM RATINGS Rating Symb.

  2N3375   2N3375







Part Number 2N3375
Manufacturers Microsemi Corporation
Logo Microsemi Corporation
Description RF & MICROWAVE TRANSISTORS
Datasheet 2N3375 Datasheet2N3375 Datasheet (PDF)

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  2N3375   2N3375







Part Number 2N3375
Manufacturers New Jersey Semi-Conductor
Logo New Jersey Semi-Conductor
Description RF & MICROWAVE TRANSISTORS
Datasheet 2N3375 Datasheet2N3375 Datasheet (PDF)

Free Datasheet http://www.datasheet4u.com/ Free Datasheet http://www.datasheet4u.com/ .

  2N3375   2N3375







NPN SILICON RF POWER TRANSISTOR

2N3375 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2N3375 is Designed for Class A,B,C Amplifier,Oscillator and Driver Applications Covering the VHF-UHF Region. PACKAGE STYLE TO- 60(ISOLATED) FEATURES INCLUDE: • Isolated Package MAXIMUM RATINGS IC VCE PDISS TJ TSTG θJC O O 1.5 A 40 V 11.6 W @ TC = 25 C -65 C to +200 C -65 C to +200 C 15 C/W O O O O 1 = EMITTER 2 = BASE 3 = COLLECTOR CHARACTERISTICS SYMBOL BVCEO BVCEX BVCBO ICEO IEBO hFE VCE(SAT) Cob ft Pout GP η TC = 25 C O TEST CONDITIONS IC = 200 mA VBE = -1.5 V IC = 500 µA VCE = 30 V VEB = 4.0 V VCE = 5.0 V IC = 500 mA VCB = 30 V VCE = 28 V VCE = 28 V IC = 150 mA Pin = 1.0 W IC = 250 mA IB = 100 mA f = 1.0 MHz f = 100 MHz f = 400 MHz IC = 100 mA MINIMUM TYPICAL MAXIMUM 40 65 65 100 100 10 1.0 10 500 3.0 4.8 40 UNITS V V V µA µA --V pF MHz W dB % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 Free Datasheet http://www.datasheet4u.com/ .


2013-09-01 : 2N3375    2N3375    2N3632    2N3733    FR309    FR301    FR302    FR303    FR304    FR305   


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