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2N3415 Datasheet

Part Number 2N3415
Manufacturers NTE
Logo NTE
Description Silicon NPN Transistor
Datasheet 2N3415 Datasheet2N3415 Datasheet (PDF)

2N3415 Silicon NPN Transistor General Purpose Amplifier TO−92 Type Package Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . .

  2N3415   2N3415






Part Number 2N3415
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description NPN General Purpose Amplifier
Datasheet 2N3415 Datasheet2N3415 Datasheet (PDF)

2N3415 Discrete POWER & Signal Technologies 2N3415 E CB TO-92 NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Collector-Emitter Voltage Value 25 25 5.0 500 -5.

  2N3415   2N3415







Part Number 2N3415
Manufacturers Central Semiconductor
Logo Central Semiconductor
Description NPN SILICON TRANSISTOR
Datasheet 2N3415 Datasheet2N3415 Datasheet (PDF)

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 www.DataSheet4U.com .

  2N3415   2N3415







Silicon NPN Transistor

2N3415 Silicon NPN Transistor General Purpose Amplifier TO−92 Type Package Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Total Device Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.3C/W Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200C/W Note 1. These rating.


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