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2N3416 Datasheet

Part Number 2N3416
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description NPN Amplifier
Datasheet 2N3416 Datasheet2N3416 Datasheet (PDF)

2N3416 / 2N3417 Discrete POWER & Signal Technologies 2N3416 2N3417 B C TO-92 E NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Collector-Emitter Voltage Value.

  2N3416   2N3416






Part Number 2N3416
Manufacturers MCC
Logo MCC
Description NPN Amplifier
Datasheet 2N3416 Datasheet2N3416 Datasheet (PDF)

MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2N3416 Features • This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300mA x Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0and MSL rating 1 x Marking: Type Number • Lead Free Finish/Rohs Compliant ("P"Suffix designates Compliant. See ordering information) Maxim.

  2N3416   2N3416







Part Number 2N3416
Manufacturers Central Semiconductor
Logo Central Semiconductor
Description NPN Transistor
Datasheet 2N3416 Datasheet2N3416 Datasheet (PDF)

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 www.DataSheet4U.com .

  2N3416   2N3416







NPN Amplifier

2N3416 / 2N3417 Discrete POWER & Signal Technologies 2N3416 2N3417 B C TO-92 E NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Collector-Emitter Voltage Value 50 50 5.0 500 -55 to +150 Units V V V mA °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJC RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max 2N3416 / 2N3417 625 5.0 83.3 200 Units mW mW/°C °C/W °C/W © 1997 Fairchild Semiconductor Corporation 3416-3417, Rev B 2N3416 / 2N3417 NPN General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Colle.


2005-03-23 : 2N2857CSM    2N2880    2N2891    2N2894    2N2894    2N2894    2N2894A    2N2894ACSM    2N2894CSM    2N2894DCSM   


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