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2N3421 Datasheet

Part Number 2N3421
Manufacturers VPT
Logo VPT
Description NPN Medium Power Silicon Transistor
Datasheet 2N3421 Datasheet2N3421 Datasheet (PDF)

2N3418(S) - 2N3421(S) Series NPN Medium Power Silicon Transistor Features • Available in JAN, JANTX, JANTXV, JANS and JANSR 100K rads(Si) per MIL-PRF-19500/393 • TO-5 & TO-39 (TO-205AD) Packages • Ideal for Medium Power Applications Requiring High Frequency Switching Rev. V4 Electrical Characteristics (TA = +25oC unless otherwise noted) Parameter Off Characteristics Collector - Emitter Breakdown Voltage Collector - Emitter Cutoff Current Collector - Emitter Cutoff Current Test Conditions Sy.

  2N3421   2N3421






Part Number 2N3421
Manufacturers Microsemi Corporation
Logo Microsemi Corporation
Description NPN MEDIUM POWER SILICON TRANSISTOR
Datasheet 2N3421 Datasheet2N3421 Datasheet (PDF)

2N3418 thru 2N3421 Available on commercial versions NPN MEDIUM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393 DESCRIPTION This family of high-frequency, epitaxial planar transistors feature low saturation voltage. These devices are also available in TO-39 and low profile U4 packaging. Microsemi also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through-hole and surface-mount packages. Qualified Le.

  2N3421   2N3421







Part Number 2N3421
Manufacturers UNITRODE
Logo UNITRODE
Description Power Transistors
Datasheet 2N3421 Datasheet2N3421 Datasheet (PDF)

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  2N3421   2N3421







Part Number 2N3421
Manufacturers Aeroflex
Logo Aeroflex
Description NPN Meduim Power Silicon Transistor
Datasheet 2N3421 Datasheet2N3421 Datasheet (PDF)

NPN Meduim Power Silicon Transistor 2N3418, 2N3419, 2N3420 & 2N3421 2N3418S, 2N3419S, 2N3420S & 2N3421S Features • Available in commercial, JAN, JANTX, JANTXV, JANS and JANSR 100K rads (Si) per MIL-PRF-19500/393 • TO-5, TO-39 (TO-205AD) Package Maximum Ratings Ratings Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current TP ≤ 1.0 ms, duty cycle ≤ 50% Total Power Dissipation @ TA = +25 °C @ TC = +100 °C Operating & Storage Temperature Range Symbol VCEO VC.

  2N3421   2N3421







Part Number 2N3421
Manufacturers MA-COM
Logo MA-COM
Description NPN Medium Power Silicon Transistor
Datasheet 2N3421 Datasheet2N3421 Datasheet (PDF)

2N3418(S) - 2N3421(S) Series NPN Medium Power Silicon Transistor Features  Available in JAN, JANTX, JANTXV, JANS and JANSR 100K rads(Si) per MIL-PRF-19500/393  TO-5 & TO-39 (TO-205AD) Package Rev. V1 Electrical Characteristics Parameter Off Characteristics Collector - Emitter Breakdown Voltage Collector - Emitter Cutoff Current Collector - Emitter Cutoff Current Emitter - Base Cutoff Current On Characteristics1 Forward Current Transfer Ratio Base - Emitter Voltage Collector - Emitter Satura.

  2N3421   2N3421







Part Number 2N3421
Manufacturers Central Semiconductor
Logo Central Semiconductor
Description NPN TRANSISTORS
Datasheet 2N3421 Datasheet2N3421 Datasheet (PDF)

2N3419 2N3420 2N3421 SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3419, 2N3420, and 2N3421 are silicon NPN transistors manufactured by the epitaxial planar process, and designed for small signal general purpose and switching applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Continuous Col.

  2N3421   2N3421







NPN Medium Power Silicon Transistor

2N3418(S) - 2N3421(S) Series NPN Medium Power Silicon Transistor Features • Available in JAN, JANTX, JANTXV, JANS and JANSR 100K rads(Si) per MIL-PRF-19500/393 • TO-5 & TO-39 (TO-205AD) Packages • Ideal for Medium Power Applications Requiring High Frequency Switching Rev. V4 Electrical Characteristics (TA = +25oC unless otherwise noted) Parameter Off Characteristics Collector - Emitter Breakdown Voltage Collector - Emitter Cutoff Current Collector - Emitter Cutoff Current Test Conditions Symbol Units Min. IC = 50 mA dc 2N3418, S, 2N3420, S 2N3419, S, 2N3421, S VCE = 80 Vdc, VBE = -0.5 Vdc 2N3418, S, 2N3420, S VCE = 120 Vdc, VBE = -0.5 Vdc 2N3419, S, 2N3421, S VCE = 45 2N3418, S, 2N3420, S VCE = 60 2N3419, S, 2N3421, S V(BR)CEO V dc 60 80 ICEX1 µA dc — ICEO µA dc — Emitter - Base Cutoff Current On Characteristics1 Forward Current Transfer Ratio Base - Emitter Voltage Collector - Emitter Saturation Voltage VEB = 6 Vdc, IC = 0 VEB = 8 Vdc, IC = 0 IEBO µA dc — IC = 100 mA dc, VCE = 2 V dc 2N3418, S, 2N3419, S 2N3420, S, 2N3421, S IC = 1 A dc, VCE = 2 V dc 2N3418, S, 2N3419, S 2N3420, S, 2N3421, S IC = 2 A dc, VCE = 2 V dc 2N3418, S, 2N3419, S 2N3420, S, 2N3421, S IC = 5 A dc, VCE = 5 V dc 2N3418, S, 2N3419, S 2N3420, S, 2N3421, S IC = 1 A dc, IB = 0.1 A dc IC = 2 A dc, IB = 0.2 A dc IC = 1 A dc, IB = 0.1 A dc IC = 2 A dc, IB = 0.2 A dc HFE VBE(SAT) Vdc 20 40 20 40 15 30 10 15 0.6 0.7 VCE(SAT) Vdc — Max. — 0.3 0.3 5.0 5.0 0.5 10.0 — — 60 120 — — — — 1.2 1.4 0.


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