2N3442

2N3442 High−Power Industrial Transistors NPN silicon power transistor designed for applications in industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and power switches. Features http://onsemi.com Collector −Emitter Sustaining Voltage − VCEO(sus) = 140 Vdc (Min) Excellent Second Breakdown Capability Pb−Free Package is Available* MAXIMUM RATINGS (Note 1) Rating Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current Base Current − Continuous − Peak − Continuous − Peak Symbol VCEO VCB VEB IC IB PD TJ, Tstg Value 140 160 7.0 10 15 7.0 − 117 0.67 −65 to +200 Unit Vdc Vdc Vdc Adc Adc W W/_C _C 10 AMPERE POWER TRANSISTOR NPN SILICON 140 VOLTS − 117 WATTS TO−204AA (TO−3) CASE 1−07 STYLE 1 Total Device Dissipation @ TC = 25_C Derate above 25_C (Note 2) Operating and Storage Junction Temperature Range MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction−to−Case Symbol RqJC Max 1.17 Unit _C/W 2N3442G AYWW MEX Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Indicates JEDEC Registered Data. 2. This data guaranteed in addition to JEDEC registered data. 2N3442 G A Y WW MEX ...