2N3700UB

2N3057A, 2N3700, 2N3700UB NPN Low Power Silicon Transistor Features JANS Qualified to MIL-PRF-19500/391 2N3700 & 2N3700UB available in JANSR JEDEC registered 2N3700, 2N3057 Lightweight & Low Power Ideal for Space, Military, & other High Reliability Applications TO-18 (TO-206AA), TO-46 (TO-206AB) Surface Mount UB Package Styles Package Rev. V2 Electrical Characteristics Parameter Off Characteristics Collector - Emitter Breakdown Voltage Collector - Base Cutoff Current Emitter - Base Cutoff Current Collector - Emitter Cutoff Current Emitter - Base Cutoff Current On Characteristics1 Forward Current Transfer Ratio Collector - Emitter Saturation Voltage Base - Emitter Saturation Voltage Dynamic Characteristics Test Conditions IC = 30 mA VBC = 140 V VEB = 7 V VCE = 90 V VEB = 5 Vdc IC = 150 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 500 mA, VCE = 10 V IC = 1 mA, VCE = 10 V IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA IC = 150 mA, IB = 15 mA Symbol Units Min. V(BR)CEO V ICBO µA IEBO1 ICES IEBO2 µA nA nA 80 — — — — HFE - VCE(SAT) Vdc VBE(SAT) Vdc 100 90 50 15 — — Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 1 A, VCE = 5 V, f = 1 kHz HFE 80 Magnitude ofSmall-Signal Short-Circuit Forward Current Transfer Ratio IC = 50 mA, VCE = 10 V, f = 20 MHz Output Capacitance VCB = 10 V, IE = 0, 100 kHz ≤ f ≤ 1 MHz VCB = 0.5 V, IE = 0, 100 kHz ≤ f ≤ 1 MHz Safe Operating Area DC Tests: Test 1: Test 2: Test 3: TC = +25 °C, I Cycle, t = 10 ms VCE ...