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2N3714 Datasheet

Part Number 2N3714
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description Silicon NPN Power Transistor
Datasheet 2N3714 Datasheet2N3714 Datasheet (PDF)

isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Designed for medium-speed switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7 V IC Collector C.

  2N3714   2N3714






Part Number 2N3714
Manufacturers Toshiba
Logo Toshiba
Description GENERAL PURPOSE POWER TRANSISTOR
Datasheet 2N3714 Datasheet2N3714 Datasheet (PDF)

SILICON NPN TRIPLE DIFFUSED TYPE 2N3714 GENERAL PURPOSE POWER TRANSISTOR. POWER REGULATOR, SWITCHING AND SOLENOID DRIVES APPLICATIONS. FEATURES . High Gain at High Current . Low Saturation Voltage: VcE(sat)=l-OV (Max.) @ IC=5A, I B=0.5A . Excellent Area of Safe Operatings MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Thermal Resistance Junction Temperature Stor.

  2N3714   2N3714







Part Number 2N3714
Manufacturers Comset Semiconductor
Logo Comset Semiconductor
Description (2N3713 - 2N3716) EPITAXIAL-BASE TRANSISTORS
Datasheet 2N3714 Datasheet2N3714 Datasheet (PDF)

NPN 2N3713 – 2N3714 – 2N3715 – 2N3716 EPITAXIAL-BASE TRANSISTORS The 2N3713, 2N3714, 2N3715 and 2N3716 are silicon epitaxial-base NPN power transistor in Jedec TO-3 metal case. They are inteded for use in power linear and switching applications. The complementary PNP types are 2N3789, 2N3790, 2N3791 and 2N3792 respectively. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCBO Collector-BaseVoltage Ratings IE = 0 2N3713 2N3715 2N3714 2N3716 2N3713 2N3715 2N3714 2N3716 Value 80 Unit V 10.

  2N3714   2N3714







Part Number 2N3714
Manufacturers Central Semiconductor
Logo Central Semiconductor
Description SILICON NPN TRANSISTORS
Datasheet 2N3714 Datasheet2N3714 Datasheet (PDF)

2N3713 2N3715 2N3714 2N3716 SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3713, 2N3714, 2N3715, and 2N3716 are silicon NPN power transistors manufactured by the epitaxial-base process, mounted in a hermetically sealed metal package designed for medium speed switching and amplifier applications. MARKING: FULL PART NUMBER TO-3 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous .

  2N3714   2N3714







Part Number 2N3714
Manufacturers Motorola
Logo Motorola
Description NPN silicon power transistors
Datasheet 2N3714 Datasheet2N3714 Datasheet (PDF)

2N3713 thru 2N3716 (SILICON) CASE 11 (TO-3) NPN silicon power transistors for medium-speed switching and amplifier applications. Complement to PNP types 2N3789 thru 2N3792. MAXIMUM RATINGS Rating C/')llector-Base Voltage Collector-Emitter Voltage f--- Emitter-Base Voltage Collector Current Base Current Power Dissipation Thermal Resistance Symbol VCB VCEO VEB Ie IB PD eJC 2N3713 2N3715 80 60 7.0 10 4.0 150 l.l7 2N3714 2N3716 100 80 7.0 10 4.0 150 1.17 Unit Volts Volts Volts Amp Amp Watts °.

  2N3714   2N3714







Part Number 2N3714
Manufacturers NTE
Logo NTE
Description Silicon NPN Transistor
Datasheet 2N3714 Datasheet2N3714 Datasheet (PDF)

2N3714 Silicon NPN Transistor Audio Power Amp, Switch TO−3 Type Package Description: The 2N3714 is a silicon NPN transistor in a TO−3 type package designed for medium speed switching and amplifier applications. Features: D Gain Ranged Specified at 1A and 3A D Low Collector−Emitter Saturation Voltage: VCE9sat) = 0.5V (Typ) @ IC = 5A, IB = 500mA D Excellent Safe Operating Areas Absolute Maximum Ratings: Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..

  2N3714   2N3714







Silicon NPN Power Transistor

isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Designed for medium-speed switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A PC Collector Power Dissipation@TC=25℃ 150 W TJ Junction Temperature -65~200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.17 ℃/W 2N3714 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS)* Collector-Emitter Sustaining Voltage IC=200mA; IB= 0 IEBO Emitter Cutoff Current VEB= 7V; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A VBE(sat) Base-Emitter Saturation Voltage IC=5A; IB= 0.5A VBE(on) Base-Emitter On Voltage IC= 3A; VCE= 2V hFE-1 DC Current Gain IC= 1A; VCE= 2V hFE-2 DC Current Gain IC= 3A; VCE= 2V fT Current Gain-Bandwidth Product *:Pulse test:Pulse width=300us,duty cycle≤2% IC= 0.5A; VCE= 10V; f= 1.0MHz 2N3714 MIN MAX UNIT 80 V 5 mA 1.0 V 2.0 V 1.5 V .


2016-11-22 : 2N3789    2N3714    2N3713    2N3667    2N3240    2N3239    2N3238    2N3236    2N3198    3AD53   


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