2N3771 ® 2N3772
HIGH POWER NPN SILICON TRANSISTOR
s STMicroelectronics PREFERRED SALESTYPES
DESCRIPTION The 2N3771, 2N...
2N3771 ® 2N3772
HIGH POWER NPN SILICON TRANSISTOR
s STMicroelectronics PREFERRED SALESTYPES
DESCRIPTION The 2N3771, 2N3772 are silicon epitaxial-base NPN transistors mounted in Jedec Jedec TO-3 metal case. They are intended for linear
amplifiers and inductive switching applications.
1 2
TO-3
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VCEO VCEV VCBO VEBO
IC ICM IB IBM Ptot Tstg
Collector-Emitter
Voltage (IE = 0) Collector-Emitter
Voltage (VBE = -1.5V) Collector-Base
Voltage (IB = 0) Emitter-Base
Voltage (IC = 0) Collector Current Collector Peak Current Base Current Base Peak Current Total Dissipation at Tc ≤ 25 oC Storage Temperature
December 2000
Value
2N3771
2N3772
40 60
50 80
50 100
57
30 20
30 30
7.5 5
15 15
150
-65 to 200
Unit
V V V V A A A A W oC
1/4
2N3771/2N3772
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max 1.17
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICEV Collector Cut-off
for 2N3771 VCB = 50 V
Current (VBE = -1.5V) for 2N3772 VCB = 100 V
for all
VCB = 30 V Tj = 150 oC
ICEO
Collector Cut-off Current (IB = 0)
for 2N3771 VCB = 30 V for 2N3772 VCB = 50 V
ICBO
Collector Cut-off Current (IE = 0)
for 2N3771 VCB = 50 V for 2N3772 VCB = 100 V
IEBO
Emitter Cut-off Current for 2N3771 VCB = 5 V
(IC = 0)
for 2N3772 VCB = 7 V
VCEO(sus)∗ Collector-Emitter Sustaining
Voltage (IB = 0)
IC = 0.2 A for 2N3771 for 2N3772
VCEV(sus)∗...