LAB
MECHANICAL DATA Dimensions in mm (inches)
5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178)
SEME
2N3799X
PNP, L...
LAB
MECHANICAL DATA Dimensions in mm (inches)
5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178)
SEME
2N3799X
PNP, LOW NOISE AMPLIFIER TRANSISTOR
5.33 (0.210) 4.32 (0.170)
FEATURES
SILICON PLANAR EPITAXIAL PNP TRANSISTOR CECC SCREENING OPTIONS LOW NOISE AMPLIFIER
0.48 (0.019) 0.41 (0.016) dia.
2.54 (0.100) Nom.
12.7 (0.500) min.
APPLICATIONS:
3 2 1
Low Level Amplifier Instrumentation
Amplifiers General Purpose
TO–18 METAL PACKAGE
Underside View PIN 1 – Emitter PIN 2 – Base PIN 3 – Collector
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VCBO VCEO VEBO IC PD PD TJ , TSTG RqJA RqJC Semelab plc. Collector – Base
Voltage Collector – Emitter
Voltage (IB = 0) Emitter – Base
Voltage (IB = 0) Collector Current Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Thermal Resistance Junction to Ambient Thermal Resistance Junction to Case
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
–60V –50V –5V –50mA 360mW 2.06mW / °C 1.2W 6.86mW / °C –65 to +200°C 0.49°C/mW 0.15°C/mW
Prelim. 7/96
LAB
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Parameter Test Conditions
V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) VBE(on) Collector – Emitter Breakdown
Voltage IC = –10mA Collector – Base Breakdown
Voltage Emitter – Base Breakdown
Voltage Collector Cut-off Curr...