2N2857 2N3839
2N2857 JAN, JTX, JTXV AVAILABLE
CASE 20-03, STYLE 10
TO-72 (TO-206AF)
HIGH FREQUENCY TRANSISTOR
NPN SILIC...
2N2857 2N3839
2N2857 JAN, JTX, JTXV AVAILABLE
CASE 20-03, STYLE 10
TO-72 (TO-206AF)
HIGH FREQUENCY TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter
Voltage
Collector-Base
Voltage
Emitter-Base
Voltage
—Collector Current Continuous
@Total Device Dissipation T/\ = 25°C
Derate above 25°C
@Total Device Dissipation Trj = 25°C
Derate above 25°C
Storage Temperature
Symbol vCEO VCBO VEBO
'C
PD
Pd
Tsta
Value 15 30 2.5 40 200 1.14 300 1.72
- 65 to + 200
Unit
Vdc
Vdc
Vdc mAdc
mW
mW/°C
mW
mW/°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown
Voltage* dC = 3.0 mAdc, Ib = 0)
Collector-Base Breakdown
Voltage Voltage (IE = 10 /iAdc, lc = 0)
Collector Cutoff Current
(Vqb = 15 Vdc, El - 0) (Vcb = 15 Vdc, l£ = 0, Ta = 150°C)
ON CHARACTERISTICS
DC Current Gain dC = 3.0 mAdc, Vqe = 10 Vdc)
SMALL SIGNAL CHARACTERISTICS
—Current-Gain Bandwidth P...
