Amplifier. 2N3904 Datasheet

2N3904 Datasheet PDF

Part 2N3904
Description NPN General Purpose Amplifier
Feature 2N3904 / MMBT3904 / PZT3904 — NPN General-Purpose Amplifier October 2014 2N3904 / MMBT3904 / PZT39.
Manufacture Fairchild Semiconductor
Datasheet
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2N3904
October 2014
2N3904 / MMBT3904 / PZT3904
NPN General-Purpose Amplifier
Description
This device is designed as a general-purpose amplifier
and switch. The useful dynamic range extends to 100
mA as a switch and to 100 MHz as an amplifier.
2N3904
EBC
TO-92
MMBT3904
C
SOT-23
Mark:1A
E
B
PZT3904
C
SOT-223
E
C
B
Ordering Information
Part Number
2N3904BU
2N3904TA
2N3904TAR
2N3904TF
2N3904TFR
MMBT3904
PZT3904
Marking
2N3904
2N3904
2N3904
2N3904
2N3904
1A
3904
Package
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
SOT-23 3L
SOT-223 4L
Packing Method
Bulk
Ammo
Ammo
Tape and Reel
Tape and Reel
Tape and Reel
Tape and Reel
Pack Quantity
10000
2000
2000
2000
2000
3000
2500
© 2002 Fairchild Semiconductor Corporation
2N3904 / MMBT3904 / PZT3904 Rev. 1.1.0
www.fairchildsemi.com



2N3904
Absolute Maximum Ratings(1), (2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
VCEO
VCBO
VEBO
IC
TJ, TSTG
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
40
60
6.0
200
-55 to 150
V
V
V
mA
°C
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty cycle operations.
Thermal Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Total Device Dissipation
PD Derate Above 25°C
2N3904
625
5.0
Maximum
MMBT3904(3)
350
2.8
PZT3904(4)
1,000
8.0
Unit
mW
mW/°C
RθJC Thermal Resistance, Junction to Case
83.3
°C/W
RθJA
Thermal Resistance, Junction to Ambient
200
357
125 °C/W
Notes:
3. Device is mounted on FR-4 PCB 1.6 inch X 1.6 inch X 0.06 inch.
4. Device is mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm, mounting pad for the collector lead minimum 6 cm2.
© 2002 Fairchild Semiconductor Corporation
2N3904 / MMBT3904 / PZT3904 Rev. 1.1.0
2
www.fairchildsemi.com




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