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2N3905 Datasheet

Part Number 2N3905
Manufacturers Motorola
Logo Motorola
Description Transistors
Datasheet 2N3905 Datasheet2N3905 Datasheet (PDF)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N3905/D General Purpose Transistors PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C VCEO VCBO VEBO IC PD 40 Vdc 40 Vdc 5.0 Vdc 200 mAdc 625 mW 5.0 mW/°C Total Power Dissipation @ TA = 60°C Total Device Dissipation @ TC = 25°C Der.

  2N3905   2N3905






Part Number 2N3905
Manufacturers NTE
Logo NTE
Description Silicon PNP Transistor
Datasheet 2N3905 Datasheet2N3905 Datasheet (PDF)

2N3905 & 2N3906 Silicon PNP Transistor General Purpose TO92 Type Package Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..

  2N3905   2N3905







Part Number 2N3905
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description PNP General Purpose Amplifier
Datasheet 2N3905 Datasheet2N3905 Datasheet (PDF)

2N3905 Discrete POWER & Signal Technologies 2N3905 C BE TO-92 PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 100 mA. Sourced from Process 66. See 2N3906 for characteristics. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Value 40 40 5.0 200 -5.

  2N3905   2N3905







Part Number 2N3905
Manufacturers Central Semiconductor
Logo Central Semiconductor
Description SILICON PNP TRANSISTORS
Datasheet 2N3905 Datasheet2N3905 Datasheet (PDF)

2N3905 2N3906 PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3905 and 2N3906 types are PNP silicon transistors designed for general purpose amplifier and switching applications. NPN complementary types are 2N3903 and 2N3904. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Tempe.

  2N3905   2N3905







Transistors

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N3905/D General Purpose Transistors PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C VCEO VCBO VEBO IC PD 40 Vdc 40 Vdc 5.0 Vdc 200 mAdc 625 mW 5.0 mW/°C Total Power Dissipation @ TA = 60°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD PD 250 mW 1.5 Watts 12 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg – 55 to +150 °C THERMAL CHARACTERISTICS(1) Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (2) (IC = 1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) 1. Indicates Data in addition to JEDEC Requirements. v v2. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%. Preferred devices are Motorola recommended choices for future use and best overall value. REV 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 2N3905 2N3906* *M.


2006-07-12 : 2N2907A    2N2907    2N2904    2N2904A    2N2905    2N2905A    2N2906    2N2906A    2N3906    2N3905   


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