2N4231A 2N4232A 2N4233A NPN 2N6312 2N6313 2N6314 PNP
COMPLEMENTARY SILICON POWER TRANSISTORS
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2N4231A 2N4232A 2N4233A NPN 2N6312 2N6313 2N6314 PNP
COMPLEMENTARY SILICON POWER TRANSISTORS
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DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4231A, 2N6312 series devices are complementary silicon power transistors, manufactured by the epitaxial base process, designed for general purpose amplifier and switching applications.
MARKING: FULL PART NUMBER
TO-66 CASE
MAXIMUM RATINGS: (TC=25°C) Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance
2N4231A 2N4232A 2N4233A
SYMBOL 2N6312 2N6313 2N6314
VCBO
40
60
80
VCEO
40
60
80
VEBO
5.0
IC 5.0
ICM 10
IB 2.0
PD 75
TJ, Tstg
-65 to +200
JC
2.32
UNITS V V V A A A W °C
°C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICBO
VCB=Rated VCBO
ICEO
VCE=30V (2N4231A, 2N6312)
ICEO
VCE=50V (2N4232A, 2N6313)
ICEO
VCE=70V (2N4233A, 2N6314)
ICEV
VCE=Rated VCEO, VBE=1.5V
ICEV
VCE=Rated VCEO, VBE=1.5V, TC=150°C
IEBO
VEB=5.0V
BVCEO IC=100mA, (2N4231A, 2N6312)
40
BVCEO IC=100mA, (2N4232A, 2N6313)
60
BVCEO IC=100mA, (2N4233A, 2N6314)
80
VCE(SAT) IC=1.5A, IB=0.15A
VCE(SAT) IC=3.0A, IB=0.3A
VCE(SAT) IC=5.0A, IB=1.25A
VBE(ON) VCE=2.0V, IC=1.5A
hFE VCE=2.0V, IC=0.5A
40
hFE VCE=2.0V, IC=1.5A
25
hFE VCE=2.0V, IC=3.0A
10
hFE VCE=4.0V, IC=5.0A
4.0
hfe VCE=10V, IC=...