2N4298

2N4296 2N4298 2N4299 SILICON NPN POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4296, 2N4298, and 2N4299 devices are silicon NPN power transistors designed for power amplifier and switching applications. MARKING: FULL PART NUMBER TO-66 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC IB PD TJ, Tstg JC 2N4296 2N4298 2N4299 350 500 350 250 350 250 4.0 1.0 250 20 -65 to +175 7.5 ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) 2N4296 2N4298 SYMBOL TEST CONDITIONS MIN MAX MIN MAX ICEV VCE=150V, VBE=1.5V, TC=135°C - 600 - 600 ICBO VCB=350V - 100 -- ICBO VCB=500V -- - 100 IEBO VBE=4.0V - 100 - 100 BVCEO IC=50mA 200 - 350 - VCE(SAT) IC=50mA, IB=5.0mA - 0.9 - 0.9 VBE(SAT) IC=50mA, IB=5.0mA - 1.5 - 1.5 VBE(ON) VCE=10V, IC=100mA - 0.9 - 0.9 hFE VCE=10V, IC=5.0mA 35 - 20 - hFE VCE=10V, IC=50mA 50 150 25 75 hFE VCE=10V, IC=100mA 35 - 20 - fT VCE=10V, IC=20mA, f=5.0MHz 20 - 20 - Ccb VCB=100V, IC=0, f=0.1 to 1.0MHz - 6.0 - 6.0 ton VCC=100V, IC=100mA, IB1=IB2=10mA - 7.0 - 7.0 toff VCC=200V, IC=100mA, IB1=IB2=10mA - 10 - 10 IS/b VCE=200V 75 - 75 - 2N4299 MIN MAX - 600 - 100 -- 100 250 - 0.75 - 1.5 - 0.9 35 50 150 35 20 - 6.0 - 7.0 - 10 75 - UNITS V V V A m...