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2N4406 Datasheet

Part Number 2N4406
Manufacturers Motorola
Logo Motorola
Description GENERAL PURPOSE TRANSISTORS
Datasheet 2N4406 Datasheet2N4406 Datasheet (PDF)

2N4406 2N4407 CASE 79, STYLE 1 TO-39 (TO-205AD) GENERAL PURPOSE TRANSISTORS PNP SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —"Collector Current Continuous* @Total Device Dissipation Ta = 25°C Derate above 25°C @Total Device Dissipation Jq = 25°C Derate above 25°C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Symbol VCEO .

  2N4406   2N4406






Part Number 2N4406
Manufacturers Seme LAB
Logo Seme LAB
Description Bipolar PNP Device
Datasheet 2N4406 Datasheet2N4406 Datasheet (PDF)

2N4406 Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. (00.0.8395)max. 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 2 13 45° 2.54 (0.100) 1 – Emitter TO39 (TO205AD) PINOUTS 2 – Base 3 – Collector Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. Bipolar PNP Device. VCEO = 80V IC = 1.5A All Semelab hermetically sealed products can be processe.

  2N4406   2N4406







Part Number 2N4406
Manufacturers Central Semiconductor Corp
Logo Central Semiconductor Corp
Description PNP SILICON TRANSISTOR
Datasheet 2N4406 Datasheet2N4406 Datasheet (PDF)

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 .

  2N4406   2N4406







GENERAL PURPOSE TRANSISTORS

2N4406 2N4407 CASE 79, STYLE 1 TO-39 (TO-205AD) GENERAL PURPOSE TRANSISTORS PNP SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —"Collector Current Continuous* @Total Device Dissipation Ta = 25°C Derate above 25°C @Total Device Dissipation Jq = 25°C Derate above 25°C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Symbol VCEO VCBO VEBO ic PD pd Tj, T st g Symbol Rojc R«JA Value 80 80 5.0 2.0 1.25 7.15 8.75 50 -65 to +200 Max 20 140 Unit Vdc Vdc Vdc Amps Watts mW/°C Watts mW/°C °C Unit °C/W °c/w ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted. OFF CHARACTERISTICS Characteristic Symbol Min Max Collector-Emitter Breakdown Voltage(l) Collector-Base Breakdown Voltage Emitter-Bas e Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current ON CHARACTERISTICS tic 10 mAdc, Ib = 0) 0.


2017-05-09 : 2N3250    2N3245    2N3244    2N3245    2N4453    2N4406    2N4407    2N4406    2N4405    2N4404   


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