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2N4409 Datasheet

Part Number 2N4409
Manufacturers Motorola
Logo Motorola
Description AMPLIFIER TRANSISTOR
Datasheet 2N4409 Datasheet2N4409 Datasheet (PDF)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor NPN Silicon 2N4410 COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RATINGS Rating Symbol Value Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C VCEO VCBO VEBO IC PD 80 120 5.0 250 625 5.0 Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 Operating and Storage Junction Temperature Range TJ, Tstg – 55 to +150 .

  2N4409   2N4409






Part Number 2N4407
Manufacturers Motorola
Logo Motorola
Description GENERAL PURPOSE TRANSISTORS
Datasheet 2N4409 Datasheet2N4407 Datasheet (PDF)

2N4406 2N4407 CASE 79, STYLE 1 TO-39 (TO-205AD) GENERAL PURPOSE TRANSISTORS PNP SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —"Collector Current Continuous* @Total Device Dissipation Ta = 25°C Derate above 25°C @Total Device Dissipation Jq = 25°C Derate above 25°C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Symbol VCEO .

  2N4409   2N4409







Part Number 2N4407
Manufacturers Central Semiconductor Corp
Logo Central Semiconductor Corp
Description PNP SILICON TRANSISTOR
Datasheet 2N4409 Datasheet2N4407 Datasheet (PDF)

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 .

  2N4409   2N4409







Part Number 2N4406
Manufacturers Seme LAB
Logo Seme LAB
Description Bipolar PNP Device
Datasheet 2N4409 Datasheet2N4406 Datasheet (PDF)

2N4406 Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. (00.0.8395)max. 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 2 13 45° 2.54 (0.100) 1 – Emitter TO39 (TO205AD) PINOUTS 2 – Base 3 – Collector Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. Bipolar PNP Device. VCEO = 80V IC = 1.5A All Semelab hermetically sealed products can be processe.

  2N4409   2N4409







Part Number 2N4406
Manufacturers Motorola
Logo Motorola
Description GENERAL PURPOSE TRANSISTORS
Datasheet 2N4409 Datasheet2N4406 Datasheet (PDF)

2N4406 2N4407 CASE 79, STYLE 1 TO-39 (TO-205AD) GENERAL PURPOSE TRANSISTORS PNP SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —"Collector Current Continuous* @Total Device Dissipation Ta = 25°C Derate above 25°C @Total Device Dissipation Jq = 25°C Derate above 25°C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Symbol VCEO .

  2N4409   2N4409







AMPLIFIER TRANSISTOR

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor NPN Silicon 2N4410 COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RATINGS Rating Symbol Value Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C VCEO VCBO VEBO IC PD 80 120 5.0 250 625 5.0 Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 Operating and Storage Junction Temperature Range TJ, Tstg – 55 to +150 THERMAL CHARACTERISTICS Characteristic Symbol Max Thermal Resistance, Junction to Ambient RqJA 200 Thermal Resistance, Junction to Case RqJC 83.3 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector – Emitter Breakdown Voltage (IC = 500 µAdc, VBE = 5.0 Vdc, RBE = 8.2 k ohms) Collector – Base Breakdown Voltage (IC = 10 µAdc, IE = 0) Emitter – .


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