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2N4410 Datasheet

Part Number 2N4410
Manufacturers Motorola
Logo Motorola
Description AMPLIFIER TRANSISTOR
Datasheet 2N4410 Datasheet2N4410 Datasheet (PDF)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor NPN Silicon 2N4410 COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RATINGS Rating Symbol Value Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C VCEO VCBO VEBO IC PD 80 120 5.0 250 625 5.0 Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 Operating and Storage Junction Temperature Range TJ, Tstg – 55 to +150 .

  2N4410   2N4410






Part Number 2N4410
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Amplifier Transistor
Datasheet 2N4410 Datasheet2N4410 Datasheet (PDF)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N4410/D Amplifier Transistor NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER 2N4410 1 2 3 MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 80 120 5.0 250.

  2N4410   2N4410







Part Number 2N4410
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description NPN General Purpose Amplifier
Datasheet 2N4410 Datasheet2N4410 Datasheet (PDF)

2N4410 Discrete POWER & Signal Technologies 2N4410 C BE TO-92 NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 50 mA. Sourced from Process 16. See 2N5551 for characteristics. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Value 80 120 5.0 200 -5.

  2N4410   2N4410







Part Number 2N4410
Manufacturers Central Semiconductor
Logo Central Semiconductor
Description SILICON NPN TRANSISTORS
Datasheet 2N4410 Datasheet2N4410 Datasheet (PDF)

2N4410 NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4410 is a small signal NPN silicon transistor, manufactured by the epitaxial planar process, designed for general purpose amplifier applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance .

  2N4410   2N4410







AMPLIFIER TRANSISTOR

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor NPN Silicon 2N4410 COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RATINGS Rating Symbol Value Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C VCEO VCBO VEBO IC PD 80 120 5.0 250 625 5.0 Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 Operating and Storage Junction Temperature Range TJ, Tstg – 55 to +150 THERMAL CHARACTERISTICS Characteristic Symbol Max Thermal Resistance, Junction to Ambient RqJA 200 Thermal Resistance, Junction to Case RqJC 83.3 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector – Emitter Breakdown Voltage (IC = 500 µAdc, VBE = 5.0 Vdc, RBE = 8.2 k ohms) Collector – Base Breakdown Voltage (IC = 10 µAdc, IE = 0) Emitter – .


2017-05-07 : 2N5089    2N5089    2N5088    2N5086    2N5087    2N5086    2N4410    2N4402    BC182    BC183   


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