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2N4921 Datasheet

Part Number 2N4921
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description 1 AMPERE GENERAL PURPOSE POWER TRANSISTORS
Datasheet 2N4921 Datasheet2N4921 Datasheet (PDF)

ON Semiconductor ) Medium-Power Plastic NPN Silicon Transistors . . . designed for driver circuits, switching, and amplifier applications. These high–performance plastic devices feature: 2N4921 thru 2N4923 * *ON Semiconductor Preferred Device • Low Saturation Voltage — • • • • VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp Excellent Power Dissipation Due to Thermopad Construction — PD = 30 W @ TC = 25_C Excellent Safe Operating Area Gain Specified to IC = 1.0 Amp Complement to PNP 2N4918, 2N4919, 2N.

  2N4921   2N4921






Part Number 2N4921
Manufacturers SavantIC
Logo SavantIC
Description (2N4921 - 2N4923) Silicon NPN Power Transistors
Datasheet 2N4921 Datasheet2N4921 Datasheet (PDF)

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2N4921 2N4922 2N4923 DESCRIPTION ·With TO-126 package ·Complement to type 2N4918/4919/4920 ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For driver circuits ,switching ,and amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER 2N4921 VCBO Collector-base voltage 2N4922.

  2N4921   2N4921







Part Number 2N4921
Manufacturers Motorola
Logo Motorola
Description MEDIUM-POWER PLASTIC NPN SILICON TRANSISTORS
Datasheet 2N4921 Datasheet2N4921 Datasheet (PDF)

2N4921 thru 2N4923 (SILICON) MJE4921 thruMJE4923 MEDIUM·POWER PLASTIC NPN SILICON TRANSISTORS · .. designed for driver circuits, switching, and amplifier applications. These high·performance plastic devices feature: • Low Saturation Voltage -VCE(sat)= 0.6 Vdc (Max) @ IC = 1.0 Amp • Excellent Power Dissipation Due to Thermopad Construction - PD = 30 and 40 W @ T C = 250 e • Excellent Safe Operating Area • Gain Specified to Ie = 1.0 Amp • Complement to PNP 2N4918, 2N4919, 2N4920 and MJE4918, MJE4.

  2N4921   2N4921







1 AMPERE GENERAL PURPOSE POWER TRANSISTORS

ON Semiconductor ) Medium-Power Plastic NPN Silicon Transistors . . . designed for driver circuits, switching, and amplifier applications. These high–performance plastic devices feature: 2N4921 thru 2N4923 * *ON Semiconductor Preferred Device • Low Saturation Voltage — • • • • VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp Excellent Power Dissipation Due to Thermopad Construction — PD = 30 W @ TC = 25_C Excellent Safe Operating Area Gain Specified to IC = 1.0 Amp Complement to PNP 2N4918, 2N4919, 2N4920 1 AMPERE GENERAL–PURPOSE POWER TRANSISTORS 40–80 VOLTS 30 WATTS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ *MAXIMUM RATINGS Rating Symbol VCEO VCB VEB IC IB 2N4921 40 40 2N4922 60 60 2N4923 80 80 Unit Vdc Vdc Vdc Adc Adc Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage 5.0 1.0 3.0 1.0 Collector Current — Continuous (1) Base Current — Continuous Total Power Dissipation @ TC = 25_C Derate above 25_C Operating & Storage Junction Temperature Range PD 30 0.24 Watts W/_C _C T.


2005-03-23 : 2N2857CSM    2N2880    2N2891    2N2894    2N2894    2N2894    2N2894A    2N2894ACSM    2N2894CSM    2N2894DCSM   


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