DatasheetsPDF.com

2N5101 Datasheet

Part Number 2N5101
Manufacturers Semiconductor Technology
Logo Semiconductor Technology
Description (2N5xxx) High Voltage Silicon Low and Medium Power Transistors
Datasheet 2N5101 Datasheet2N5101 Datasheet (PDF)

( DataSheet : www.DataSheet4U.com ) www.DataSheet4U.com .

  2N5101   2N5101






Part Number 2N5109
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet 2N5101 Datasheet2N5109 Datasheet (PDF)

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2N5109 DESCRIPTION ·High Current-Gain Bandwidth Product : fT= 1200MHz (Min) @VCE = 10V,IE = 50mA ·Low Saturation Voltage ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose Class C amplifier applications up to 1 GHz ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 55 V VCEO Collector-Emitter.

  2N5101   2N5101







Part Number 2N5109
Manufacturers Central Semiconductor
Logo Central Semiconductor
Description NPN RF TRANSISTOR
Datasheet 2N5101 Datasheet2N5109 Datasheet (PDF)

2N5109 SILICON NPN RF TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5109 is a Silicon NPN Epitaxial Planar RF Transistor mounted in a hermetically sealed package designed for high frequency amplifier applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Continuous Collector Current IC Continuous Base Curr.

  2N5101   2N5101







Part Number 2N5109
Manufacturers Motorola
Logo Motorola
Description HIGH FREQUENCY TRANSISTOR
Datasheet 2N5101 Datasheet2N5109 Datasheet (PDF)

2N5109 JAN, JTX, JTXV AVAILABLE CASE 79-02, STYLE 1 TO-39 (TO-205AD) HIGH FREQUENCY TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Co Hector- Base Voltage Emitter-Base Voltage Base Current —Collector Current Continuous @Total Device Dissipation Tq = 75°C(1) Derate above 25°C VCEO VCBO v EBO
  2N5101   2N5101






Part Number 2N5109
Manufacturers ASI
Logo ASI
Description NPN SILICON HIGH FREQUENCY TRANSISTOR
Datasheet 2N5101 Datasheet2N5109 Datasheet (PDF)

2N5109 NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE TO-39 DESCRIPTION: The 2N5109 is a High Frequency Transistor for General Purpose Amplifier Applications. MAXIMUM RATINGS IC 400 mA VCE PDISS 20 V 1.0 W @ TA = 25 OC 2.5 W @ TC = 75 OC 1 = Emitter 2 = Base 3 = Collector CHARACTERISTICS TA = 25 OC SYMBOL TEST CONDITIONS BVCEO IC = 5.0 mA BVCER IC = 5.0 mA RBE = 10Ω BVCBO IC = 100 µA ICEX VCE = 35 V VCE = 15 V VBE = -1.50 V VBE = -1.50 V TC = 150 OC ICEO VCE = 15 V IEBO.

  2N5101   2N5101







Part Number 2N5109
Manufacturers Advanced Power Technology
Logo Advanced Power Technology
Description RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Datasheet 2N5101 Datasheet2N5109 Datasheet (PDF)

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 2N5109 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • Silicon NPN, To-39 packaged VHF/UHF Transistor 1.2 GHz Current-Gain Bandwidth Product @ 50mA Maximum Unilateral Gain = 12dB (typ) @ 200 MHz 1. Emitter 2. Base 3. Collector TO-39 DESCRIPTION: www.DataSheet4U.com The 2N5109 is a silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driv.

  2N5101   2N5101







(2N5xxx) High Voltage Silicon Low and Medium Power Transistors

( DataSheet : www.DataSheet4U.com ) www.DataSheet4U.com .


2006-05-06 : D750010A    25FV051T    64F3048F16    18-000-0022    18-000-0016    AF58TC    18-000-0019    10250TCxN    18-000-0040    IPL10020   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)