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2N5116 Datasheet

Part Number 2N5116
Manufacturers Calogic LLC
Logo Calogic  LLC
Description P-Channel JFET
Datasheet 2N5116 Datasheet2N5116 Datasheet (PDF)

P-Channel JFET Switch CORPORATION 2N5114 – 2N5116 GENERAL DESCRIPTION Ideal for inverting switching or "Virtual Gnd" switching into inverting input of Op. Amp. No driver is required and ±10VAC signals can be handled using only +5V logic (TTL or CMOS). FEATURES ON Resistance • Low • ID(off)<500pA • Switches directly from TTL Logic PIN CONFIGURATION ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise noted) Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . . 30V Gate Current . . .

  2N5116   2N5116






Part Number 2N5116
Manufacturers Linear Integrated Systems
Logo Linear Integrated Systems
Description SINGLE P-CHANNEL JFET
Datasheet 2N5116 Datasheet2N5116 Datasheet (PDF)

2N5114 SERIES Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR SILICONIX 2N5114 LOW ON RESISTANCE LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS1 @ 25 °C (unless otherwise stated) Maximum Temperatures Storage Temperature Junction Operating Temperature Maximum Power Dissipation Continuous Power Dissipation Maximum Currents Gate Current Maximum Voltages Gate to Drain Gate to Source 30V 30V -50mA 500mW -55 to 200°C -55 to 200°C 75Ω 6pF SINGLE P-CHANNEL JFET TO-18 BOTTOM VIEW G 2 3 D S 1 ST.

  2N5116   2N5116







Part Number 2N5116
Manufacturers Central Semiconductor
Logo Central Semiconductor
Description SILICON P-CHANNEL JFETS
Datasheet 2N5116 Datasheet2N5116 Datasheet (PDF)

2N5114 2N5115 2N5116 SILICON P-CHANNEL JFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5114, 2N5115, and 2N5116 are silicon P-Channel JFETs designed for switching applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: (TA=25°C) Gate-Drain Voltage Gate-Source Voltage Gate Current Power Dissipation Operating and Storage Junction Temperature SYMBOL VGD VGS IG PD TJ, Tstg 30 30 50 500 -65 to +200 UNITS V V mA mW °C ELECTRICAL CHARACTERISTICS: (.

  2N5116   2N5116







Part Number 2N5116
Manufacturers VPT
Logo VPT
Description P-Channel J-FET
Datasheet 2N5116 Datasheet2N5116 Datasheet (PDF)

2N5114, 2N5115, 2N5116 P Channel J-FET Features • Available in JAN, JANTX and JANTXV per MIL-PRF-19500/476 • TO-18 and UB Package Types • Designed for High Reliability Switching Applications Rev. V2 Electrical Characteristics (TA = +25oC unless otherwise specified) Parameter Test Conditions Symbol Units Min. Gate-Source Breakdown Voltage VDS = 0, IG = 1.0 µA dc V(BR)GSS V dc 30 Max. — Drain-Source “On” State Voltage VGS = 0 V, ID = -15 mA dc 2N5114 VGS = 0 V, ID = -7.0 mA dc 2N5115 .

  2N5116   2N5116







Part Number 2N5116
Manufacturers Microsemi
Logo Microsemi
Description P-Channel J-FET
Datasheet 2N5116 Datasheet2N5116 Datasheet (PDF)

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  2N5116   2N5116







Part Number 2N5116
Manufacturers Micross
Logo Micross
Description P-CHANNEL JFET
Datasheet 2N5116 Datasheet2N5116 Datasheet (PDF)

2N5116 P-CHANNEL JFET Linear Systems replaces discontinued Siliconix 2N5116 This analog switch is designed for inverting switching into inverting input of an Operational Amplifier. The hermetically sealed TO-18 package is well suited for hi-reliability and harsh environment applications. (See Packaging Information). FEATURES  DIRECT REPLACEMENT FOR SILICONIX 2N5116  LOW ON RESISTANCE  rDS(on) ≤ 150Ω  LOW CAPACITANCE  6pF  ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted)  Maximum Temper.

  2N5116   2N5116







P-Channel JFET

P-Channel JFET Switch CORPORATION 2N5114 – 2N5116 GENERAL DESCRIPTION Ideal for inverting switching or "Virtual Gnd" switching into inverting input of Op. Amp. No driver is required and ±10VAC signals can be handled using only +5V logic (TTL or CMOS). FEATURES ON Resistance • Low • ID(off)<500pA • Switches directly from TTL Logic PIN CONFIGURATION ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise noted) Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . . 30V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Storage Temperature Range . . . . . . . . . . . . . -65oC to +200oC Operating Temperature Range . . . . . . . . . . . -55oC to +200oC Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oC Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW Derate above 25oC . . . . . . . . . . . . . . . . . . . . . . . . 3mW/ oC NOTE: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ORDERING INFORMATION TO-18 Part Package Temperature Range -55oC to +200oC -55oC to +200oC 2N5114-16 Hermetic TO-18 X2N5114-16 Sorted Chips in Carriers D 5508 G,C S SWIT.


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