Data Sheet No. 2N5238
Type 2N5238
Geometry 3111 Polarity NPN Qual Level: JAN - JANTXV
Features: • • • • Silicon power t...
Data Sheet No. 2N5238
Type 2N5238
Geometry 3111 Polarity NPN Qual Level: JAN - JANTXV
Features: Silicon power transistor for use in high speed switching applications. Housed in a TO-5 case. Also available in chip form using the 3111 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/394 which Semicoa meets in all cases.
Generic Part Number: 2N5238
REF: MIL-PRF-19500/394
TO-5
Maximum Ratings
TC = 25oC unless otherwise specified
Rating
Collector-Emitter
Voltage Collector-Base
Voltage Emitter-Base
Voltage Collector Current, Continuous Power Disipation TA = 25 C ambient Derate above 25oC Power Disipation TA = 25oC ambient Derate above 25oC Thermal Impedance Operating Junction Temperature Storage Temperature
o
Symbol
VCEO VCBO VEBO IC PT PT RJC RJA TJ TSTG
Rating
170 200 10 10 1.0 5.7 5.0 50 0.020 0.175 -65 to +200 -65 to +200
Unit
V V V A mW o mW/ C Watt mW/oC o C/mW
o
C/mW
o
C C
o
Data Sheet No. 2N5238
Electrical Characteristics
TC = 25oC unless otherwise specified
OFF Characteristics
Collector-Base Breakdown
Voltage IC = 10 µA Collector-Emitter Breakdown
Voltage IC = 0.1 A, pulsed Emitter-Base Breakdown
Voltage IE = 10 µA Collector-Emitter Cutoff Current VCE = 160 V VBE = 0.5 V, VCE = 200 V VBE = -0.5 V, VCE = 200 V, TC = +150oC Base-Emitter Cutoff Current VEB = 5 V Collector-Base Cutoff Current VCB = 80 V
Symbol
V(BR)CBO V(BR)CEO V(BR)EBO ICEO1 ICEX ICEX2 IEBO ICBO
Min
200 170 7.0 -----------
Max
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Unit
V V
--10 10 100 0.1 0.1
V µA...