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2N524 Datasheet

PNP Germanium Transistors

w w a D . w S a t e e h U 4 t m o .c w w .D w t a S a e h t e U 4 .c m o Central TM Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 www.centralsemi.com w w w .D a S a t e e h U 4 t m o .c .

Central Semiconductor
2N524.pdf

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Central Semiconductor 2N524 Datasheet
w w a D . w S a t e e h U 4 t m o .c w w .D w t a S a e h t e U 4 .c m o Central TM Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 www.centralsemi.com w w w .D a S a t e e h U 4 t m o .c .





2NS24 thru 2NS27(GERMANIUM) PNP germanium transistor for switching and amplifier applications in the audio-frequency range. Available for military and high-reliability industrial purposes. CASE 31(1} (TO-S) Base connected to case MAXIMUM RATINGS Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Storage.

Motorola
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Motorola 2N524 Datasheet
2NS24 thru 2NS27(GERMANIUM) PNP germanium transistor for switching and amplifier applications in the audio-frequency range. Available for military and high-reliability industrial purposes. CASE 31(1} (TO-S) Base connected to case MAXIMUM RATINGS Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Storage and Operating Temperature Collector Dissipation fa) 25°C Ambient Thermal Resistance Junction to Ambient Thermal Resistance (infinite heat sink) Symbol VCB Value 45 VCEO 30 VEB 15 IC 500 Tstg ' TJ -65 to +100 P D 225 ()JA 0.333 ()JC O. 15 Unit Vdc Vdc Vdc mAdc °c mW °C/mW °C/mW 2-45 2N524 THRU 2N527 (continued) ELECTRICAL CHARACTERISTICS ITA = 250 C unless otherwise specified) Characteristics Collector Cutoff Current (VCB =30 Vdc, ~ =0) Emitter Cutoff Current (VEB =15 Vdc, IC =0) Collector-Emitter Breakdown Voltage (IC =0.6 mAdc, RaE =10K) Collector-Emitter Reach Through (Punch-Thru) Voltage (VEB =1 Vdc, VTVM Z 2.1 Megohm.







 

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