2N5415CSM4 2N5416CSM4
MECHANICAL DATA Dimensions in mm (inches)
5.59 ± 0.13 (0.22 ± 0.005) 0.25 ± 0.03 (0.01 ± 0.001)
...
2N5415CSM4 2N5416CSM4
MECHANICAL DATA Dimensions in mm (inches)
5.59 ± 0.13 (0.22 ± 0.005) 0.25 ± 0.03 (0.01 ± 0.001)
PNP PLANAR EPITAXIAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS
1.40 ± 0.15 (0.055 ± 0.006)
FEATURES
Silicon Planar PNP Transistor Hermetic Ceramic Surface Mount Package
0.23 min. (0.009)
0.64 ± 0.08 (0.025 ± 0.003)
0.23 rad. (0.009) 3 2 1.27 ± 0.05 (0.05 ± 0.002)
3.81 ± 0.13 (0.15 ± 0.005)
4
1
CECC Screening Options Space quality Options
1.02 ± 0.20 (0.04 ± 0.008)
2.03 ± 0.20 (0.08 ± 0.008)
LCC3 PACKAGE Underside View
PAD 1 – Collector PAD 2 – N/C PAD 3 – Emitter PAD 4 – Base
ABSOLUTE MAXIMUM RATINGS
VCBO VCEO(sus) VEBO IC IB Ptot Tstg TJ Rth-j-amb
Tcase = 25°c unless otherwise stated
2N5415 -200V -200V -4V
2N5416 -350V -300V -6V
Collector – Base
Voltage (IE=0) Collector – Emitter
Voltage (IB=0) Emitter – Base
Voltage (IC=0) Collector Current Base Current Total Device Dissipation at TA £ 25°C Storage Temperature Junction Temperature Thermal Resistance Junction - Ambient
1A 0.5A 1W –65 to +200°C 175°C 150°C/W
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail:
[email protected] Website: http://www.semelab.co.uk
Prelim. 02/00
2N5415CSM4 2N5416CSM4
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min.
ICBO ICEO IEBO Collector Cut Off Current (VE =0) Emitter Cut Off Current (IB =0) Emitter Cut Off Current (IC =0...
