2NS471 (SILICON)
thru
2NS476
P-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS
Depletion mode Junction Field-Effect Transisto...
2NS471 (SILICON)
thru
2NS476
P-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS
Depletion mode Junction Field-Effect Transistors designed for general-purpose amplifier and switching applications.
High Gate·Source Breakdown
Voltage V(BR)GSS = 40 Vdc (Min) for All Types
High DC Input Resistance IGSS = 100 pAdc (Max) @ VGS = 10 Vdc
Low Reverse Transfer Capacitance Crss = 1.0pF (Max)@VDs=-15Vdc
Tight IDSS Range for Easier Circuit Design Drain and Source Interchangeable
P-CHANNEL
JUNCTION FIELD-EFFECT TRANSISTORS
'MAXIMUM RATINGS Rating
Drain-Gate
Voltage Reverse Gate-Source
Voltage Forward Gate Current Total Power Dissipation @TA = 250 C
Derate above 2SoC Operating Channel Temperature Range Storage Temperature Range
*Indicates JEDEC Registered Data.
Symbol VOG VGSR IGF Po
Tchannel T stg
Value 40 40 10 300 2.0
-65 to +175 -65 to +200
Unit
Vde
Vde
mAde mW
mW/oC
°c °c
-18~IrrdcB
SEATING PLANE
.
-
_
F _
_tI
K
~
STYLE 2 PIN 1. SOURCE
2. GATE 3. ORAIN 4. SUBSTRATE...