2N5642 Datasheet





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2N5642 Datasheet - NPN SILICON RF POWER TRANSISTORS

2N5642   2N5642  

Datasheet: 2N5642 datasheet

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Description: 2N5641 (SILICON) 2N5642 2N5643 NPN SILI CON RF POWER TRANSISTORS . designed for VH F power amplifier or oscillator app lications in military and industrial eq uipment. These devices are particularly suited for use in Class AB, B, or C am plifier applications to 400 MHz. • B alanced Emitter Construction to provide the designer with the device technolog y that assures ruggedness and resists t ransistor damage caused by load mismatc h. • Stripline packaging for lower le ad inductance and better broad· band c apability. • Ceramic Packaging • Sp ecified 2B Volt, 175 MHz Characteristic s2N5641 - 7.0 Watts Output Power at B.4 dB Gain 2N5642 - 20 Watts Output Power at 8.2 dB Gain 2N5643 - 40 Watts Output Powe


Manufacture Part Number Description

Microsemi

2N5642

RF & Microwave Transistor

HGSemi

2N5642

HG RF POWER TRANSISTOR

ASI

2N5642

NPN SILICON RF POWER TRANSISTOR

ETC

2N5642

NPN SILICON RF POWER TRANSISTORS

New Jersey Semiconductor

2N5642

Trans GP BJT NPN 35V 3A 4-Pin Style M135

STMicroelectronics

2N5642

(2N5641 - 2N564) VHF POWER TRANSISTOR




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