TECHNICAL DATA
PNP DUAL SILICON TRANSISTOR
Qualified per MIL-PRF-19500/496 Devices
2N5795 2N5796 2N5796U
Qualified Leve...
TECHNICAL DATA
PNP DUAL SILICON TRANSISTOR
Qualified per MIL-PRF-19500/496 Devices
2N5795 2N5796 2N5796U
Qualified Level
JAN JANTX JANTXV
MAXIMUM RATINGS Ratings
Collector-Emitter
Voltage Collector-Base
Voltage Emitter-Base
Voltage Collector Current
Symbol
VCEO VCBO VEBO IC @ TA = +250C
Value
60 60 5.0 600
Units
Vdc Vdc Vdc mAdc
TO-78*
One
Total Power Dissipation PT TJ, Tstg
(1)
Section 0.5
Both Sections 0.6
(2)
W
0
Operating & Storage Junction Temperature Range 1) Derate linearly 2.86 mW/0C for TA ≥ +250C 2) Derate linearly 3.43 mW/0C for TA ≥ +250C
-65 to +175
C
6 PIN SURFACE MOUNT*
*See MILPRF19500/496 for package outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics Symbol V(BR)CEO ICBO Min. 60
Max.
Unit Vdc
OFF CHARACTERISTICS
Collector-Emitter Breakdown
Voltage IC = 10 mAdc Collector-Base Cutoff Current VCB = 50 Vdc VCBO = 60 Vdc Emitter-Base Cutoff Current VEB = 3.0 Vdc VEB = 5.0 Vdc
10 10 100 10
ηAdc µAdc ηAdc µAdc
IEBO
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42203 Page 1 of 2
2N5795, 2N5796 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics Symbol Min. Max. Unit
ON CHARACTERISTICS (1)
Forward-Current Transfer Ratio IC = 100 µAdc, VCE = 10 Vdc IC = 1.0 mAdc, VCE = 10 Vdc IC = 10 mAdc, VCE = 10 Vdc IC = 150 mAdc, VCE = 10 Vdc IC = 300 mAdc, VCE = 10 Vdc IC = 150 mAdc, VCE = 1.0 Vdc IC = 100 µAdc, VCE = 10 Vdc IC = 1.0 mAdc, VCE = 10 Vdc IC = 10 mAdc, V...