2N5838

D\lCIBLJI] Solid State Division FileNo. 410 Power Transistors 2N5838 2N5839 2N5840 RCA 2N5838;2N5839 and 2N5840** are epitaxial silicon n-p-n power transistors utilizing a multiple-emitter-site structure. These devices employ the popular ]EDEC TO-3 package; they differ mainly in voltage, currentgain, and VCE(sat) ratings. Featuring high breakdown voltage ratings and low-saturation voltage values, the 2NS838, 2N5839 and 2N5840 are especially suitable for use in inverteIS, deflection circuits, switching regulators, high-voltage bridge amplifiers, ignition circuits, and other high-voltage switching applications. ** Formerly RCA Dev. types TA7513f TA7530, and TA7420 respectively. MAXIMUM RATINGS, Absolute·MoKlmum Volues: 2N5838 2N5839 2N5840 *COLLECTOR-TO-SASE VOLTAGE, VCSO ..... 275 300 375 COLLECTOR'TQ-EMITTER SUSTAINING VOLTAGE: * :f~~ ~:::r::hl~:~~)~f) 250 275 350 -1.5 V, VCE.V(sus)" 275 300 375 With external base-to-emitter n,resistance (RSE)'::: 50 ...