2N5942

2N5941 (SILICON) 2N5942 The RF Lin.e NPN SILICON RF POWER TRANSISTORS · .. designed primarily for applications as a high-power linear amplifier from 2.0 to 30 MHz, in single sideband mobile, marine and base station equipment. Specified 28 Volt, 30 MHz Characteristics - Output Power = 40 W (PEP) - 2N5941 = 80 W (PEP) - 2N5942 Minimum Gain = 13 dB Efficiency = 40% Intermodulation Distortion = -30 dB (Max) Isothermal-Resistor Design Results in Rugged Device 2N5942 Available as Matched Pairs for Push-Pull Amplifier Applications MATCHING PROCEOURE In the push-pull circuit configuration two device parameters are critical for optimum circuit performance. These parameters are VSE(on) and hFE. Both parameters can be guaranteed by measuring ICO of the devices and selecting pairs with a "Ica ..;; 10 mAde. Actual Ica matching is performed in the 2N5942 test circuit with a VeE equal to 2B Volts. The base bias supply is adjusted to set Ica equal to 40 mAde using a reference standard 2N...