2N5947
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current ...
2N5947
MAXIMUM RATINGS
Rating
Collector-Emitter
Voltage
Collector-Base
Voltage
Emitter-Base
Voltage
—Collector Current Continuous
@Total Device Dissipation Tc = 25°C
Derate above 25°C Storage Temperature
Symbol VCEO VCBO v EBO
ic
PD
Tstg
Value 30 40 3.5 400 5.0
28.6
-65 to +200
Unit Vdc Vdc Vdc
mAdc
Watts mW/°C
°C
CASE 244A-01, STYLE 1
TO-117 (TO-232AA)
HIGH FREQUENCY TRANSISTOR
NPN SILICON
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.)
OFF CHARACTERISTICS
Characteristic
Collector-Emitter Breakdown
Voltage (Ic = 20 mAdc, Ib = 0) Collector-Base Breakdown
Voltage (Ic = 100 /uAdc, lg = 0) Emitter-Base Breakdown
Voltage (lg .= 100 /*Adc, cl = 0) Collector Cutoff Current (Vce = 28 Vdc, Ib = 0) Collector Cutoff Current (Vcb - 20 Vdc, Ie = 0) Emitter Cutoff Current 1Vbe = 3.5 Vdc, Ic = 0)
ON CHARACTERISTICS
DC Current Gain (Ic = 75 mAdc, Vce = 20 Vdc)
Collector-Emitter Saturation
Voltage (Ic = 200 mAdc, Ib = 20 mAdc)
Base-Emitter Saturation
Voltage (Ic = 200 m...