2N5953

2N5949 2N5951 2N5952 2N5953 SILICON N-CHANNEL JFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5949 Series devices are silicon N-Channel JFETs designed for switching, RF amplifier and mixer applications where low capacitance is desired. MARKING: FULL PART NUMBER TO-92-18R CASE MAXIMUM RATINGS: (TA=25°C) Gate-Source Voltage Drain-Gate Voltage Gate Current Power Dissipation Operating and Storage Junction Temperature SYMBOL VGS VDG IG PD TJ, Tstg 30 30 10 360 -65 to +150 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) 2N5949 2N5951 SYMBOL TEST CONDITIONS MIN MAX MIN MAX IGSS VGS=15V, VDS=0 - 1.0 - 1.0 IGSS VGS=15V, VDS=0, TA=100°C - 200 - 200 IDSS VDS=15V, VGS=0 12 18 7.0 13 BVGSS IG=1.0μA 30 - 30 - VGS VDS=15V, ID=1.2mA 2.25 6.0 -- VGS VDS=15V, ID=0.7mA -- 1.3 4.5 VGS VDS=15V, ID=0.4mA -- -- VGS VDS=15V, ID=0.25mA -- -- VGS(OFF) VDS=15V, ID=100nA 3.0 7.0 2.0 5.0 yfs VDS=15V, VGS=0, f=1.0kHz 3.5 7.5 3.5 6.5 yos VDS=15V, VGS=0, f=1.0kHz - 75 - 75 Ciss VDS=15V, VGS=0, f=1.0MHz - 6.0 - 6.0 Crss VDS=15V, VGS=0, f=1.0MHz - 2.0 - 2.0 rds(on) VGS=0, ID=0, f=1.0kHz - 200 - 250 gis VDS=15V, VGS=0, f=100MHz - 250 - 250 gfs VDS=15V, VGS=0, f=100MHz 3.0 7.5 3.0 6.5 gos VDS=15V, VGS=0, f=100MHz - 150 - 100 NF VDS=15V, VGS=0, f=100MHz, RG=1.0kΩ - 5.0 - 5.0 NF VDS=15V, VGS=0, f=1.0kHz, RG=1.0MΩ - 2.0 - 2.0 VN VDS=15V, VGS=0, f=1.0kHz - 100 - 100 2N5952 MIN MAX - 1...