| Part Number | 2N5962 |
| Manufacturer | Fairchild Semiconductor |
| Title | NPN General Purpose Amplifier |
| Description | 2N5962/ MMBT5962 Discrete POWER & Signal Technologies 2N5962 MMBT5962 C E C BE TO-92 SOT-23 Mark: 117 B NPN General Purpose Amplifier This ... |
| Features |
A
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2N5962 625 5.0 83.3 200
Max
*MMBT5962 350 2.8 357
Units
mW mW/ °C °C/W °C/W
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
... |
| Datasheet | 2N5962 pdf datasheet |
| Part Number | 2N5962 |
| Manufacturer | Central Semiconductor |
| Title | NPN SILICON TRANSISTOR |
| Description | The CENTRAL SEMICONDUCTOR 2N5961 series devices are epoxy molded silicon NPN transistors, manufactured by the epitaxial planar process, designed . |
| Features |
-
BVEBO
IE=10μA
7.0 -
7.0 -
VCE(SAT) IC=10mA, IB=0.5mA, PW=300μs
-
0.2
- 0.2
VBE(ON)
VCE=5.0V, IC=1.0mA
0.5 0.7
0.5 0.7
hFE
VCE=5.0V, IC=10μA
100 -
450 -
hFE
VCE=5.0V, IC=100μA
120 -
500 -
hFE
VCE=5.0V, IC=1.0mA
135 -
550 -
hFE
VCE=5.0V, IC=10mA
150 700
600 1.4K
hfe
VCE. |
| Datasheet | 2N5962 pdf datasheet |
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