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2N6107 Transistor Datasheet PDFPNP Transistor PNP Transistor |
| Part Number | 2N6107 |
|---|---|
| Description | PNP Transistor |
| Feature | isc Silicon PNP Power Transistor INCHANGE Semiconductor 2N6107 DESCRIPTION ·DC Current Gain- : hFE = 30-150@ IC= -2A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -70V(Min) ·Complement to Type 2N6292 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general-purpose amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -70 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A. |
| Manufacture | INCHANGE |
| Datasheet |
| Part Number | 2N6107 |
|---|---|
| Description | PNP Transistor |
| Feature | isc Silicon PNP Power Transistor INCHANGE Semiconductor 2N6107 DESCRIPTION ·DC Current Gain- : hFE = 30-150@ IC= -2A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -70V(Min) ·Complement to Type 2N6292 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general-purpose amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -70 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A. |
| Manufacture | INCHANGE |
| Datasheet |
| Part Number | 2N6107 |
|---|---|
| Description | Complementary Silicon Plastic Power Transistors |
| Feature | 2N6107, 2N6109, 2N6111 (PNP), 2N6288, 2N6292 (NPN)
Complementary Silicon Plastic Power Transistors
These devices are designed for use in general−purpose amplifier and switching applications. Features • High DC Current Gain • High Current Gain − Bandwidth Product • TO−220 Compact Package • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS (Note 1) Rating Symbol Value Unit Collector−Emitter Voltage 2N6111, 2N6288 2N6109 2N6107, 2N6292 VCEO 30 50 70 Vdc Collector−Base Voltage 2N6111, 2N6288 2N6109 2N6107, 2N6292 VCB Vdc 40 60 80 Emitter−Base Voltage Collector Current −. |
| Manufacture | ON Semiconductor |
| Datasheet |
| Part Number | 2N6107 |
|---|---|
| Description | Complementary Silicon Plastic Power Transistors |
| Feature | 2N6107, 2N6109, 2N6111 (PNP), 2N6288, 2N6292 (NPN)
Complementary Silicon Plastic Power Transistors
These devices are designed for use in general−purpose amplifier and switching applications. Features • High DC Current Gain • High Current Gain − Bandwidth Product • TO−220 Compact Package • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS (Note 1) Rating Symbol Value Unit Collector−Emitter Voltage 2N6111, 2N6288 2N6109 2N6107, 2N6292 VCEO 30 50 70 Vdc Collector−Base Voltage 2N6111, 2N6288 2N6109 2N6107, 2N6292 VCB Vdc 40 60 80 Emitter−Base Voltage Collector Current −. |
| Manufacture | ON Semiconductor |
| Datasheet |
| Part Number | 2N6107 |
|---|---|
| Description | COMPLEMENTARY SILICON POWER TRANSISTORS |
| Feature | 2N6107 2N6109 2N6111 PNP 2N6288 2N6290 2N6292 NPN
COMPLEMENTARY SILICON POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6107, 2N6288 series types are complementary silicon power transistors, manufactured by the epitaxial base process, designed for general purpose power amplifier and switching applications. MARKING: FULL PART NUMBER TO-220 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and. |
| Manufacture | Central Semiconductor |
| Datasheet |
| Part Number | 2N6107 |
|---|---|
| Description | COMPLEMENTARY SILICON POWER TRANSISTORS |
| Feature | 2N6107 2N6109 2N6111 PNP 2N6288 2N6290 2N6292 NPN
COMPLEMENTARY SILICON POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6107, 2N6288 series types are complementary silicon power transistors, manufactured by the epitaxial base process, designed for general purpose power amplifier and switching applications. MARKING: FULL PART NUMBER TO-220 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and. |
| Manufacture | Central Semiconductor |
| Datasheet |
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