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2N6109 Transistor Datasheet PDFSilicon PNP Transistor Silicon PNP Transistor |
Part Number | 2N6109 |
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Description | Silicon PNP Transistor |
Feature | 2N6109 Silicon PNP Transistor Audio Power Output and Medium Power Switching TO−220 Type Package
Description: The 2N6109 is a silicon PNP transistor in a TO−220 type package designed for use in general purpose amplifier and switching applications. Features: D DC Current Gain Specified to 7 Amps: hFE = 2. 3 Min @ IC = 7A D Collector−Emitter Sustaining Voltage: VCEO(sus) = 50V Min D High Current−Gain Bandwidth Product: fT = 10MHz Min @ IC = 500mA Absolute Maximum Ratings: (Note 1) Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
Manufacture | NTE |
Datasheet |
Part Number | 2N6109 |
---|---|
Description | Silicon PNP Transistor |
Feature | 2N6109 Silicon PNP Transistor Audio Power Output and Medium Power Switching TO−220 Type Package
Description: The 2N6109 is a silicon PNP transistor in a TO−220 type package designed for use in general purpose amplifier and switching applications. Features: D DC Current Gain Specified to 7 Amps: hFE = 2. 3 Min @ IC = 7A D Collector−Emitter Sustaining Voltage: VCEO(sus) = 50V Min D High Current−Gain Bandwidth Product: fT = 10MHz Min @ IC = 500mA Absolute Maximum Ratings: (Note 1) Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
Manufacture | NTE |
Datasheet |
Part Number | 2N6109 |
---|---|
Description | PNP Transistor |
Feature | isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2N6109
DESCRIPTION ·DC Current Gain-
: hFE = 30-150@ IC= -2. 5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -50V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general-purpose amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A ICM Collector Current-. |
Manufacture | INCHANGE |
Datasheet |
Part Number | 2N6109 |
---|---|
Description | PNP Transistor |
Feature | isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2N6109
DESCRIPTION ·DC Current Gain-
: hFE = 30-150@ IC= -2. 5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -50V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general-purpose amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A ICM Collector Current-. |
Manufacture | INCHANGE |
Datasheet |
Part Number | 2N6109 |
---|---|
Description | (2N6107 - 2N6111) Silicon PNP Power Transistors |
Feature | SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
DESCRIPTION ·With TO-220 package ·Complement to NPN type: 2N6288; 2N6290 ;2N6292 APPLICATIONS ·Power amplifier and switching circuits applications
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base
2N6107 2N6109 2N6111
Fig. 1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER 2N6107 VCBO Collector-base voltage 2N6109 2N6111 2N6107 CEO www. DataSheet4U. com CONDITIONS VALUE -40 UNIT Open emitter -60 -80 -30 V V Collector-emitter voltage 2N6109 . |
Manufacture | Savantic |
Datasheet |
Part Number | 2N6109 |
---|---|
Description | (2N6107 - 2N6111) Silicon PNP Power Transistors |
Feature | SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
DESCRIPTION ·With TO-220 package ·Complement to NPN type: 2N6288; 2N6290 ;2N6292 APPLICATIONS ·Power amplifier and switching circuits applications
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base
2N6107 2N6109 2N6111
Fig. 1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER 2N6107 VCBO Collector-base voltage 2N6109 2N6111 2N6107 CEO www. DataSheet4U. com CONDITIONS VALUE -40 UNIT Open emitter -60 -80 -30 V V Collector-emitter voltage 2N6109 . |
Manufacture | Savantic |
Datasheet |
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