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OU(]5lJ1]
Solid State Division
Pow...
File No. 0/7 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _...:....-
OU(]5lJ1]
Solid State Division
Power Transistors
2N6246 2N6247 2N6248 2N6469 2N6470 2N6471 2N6472
JEDEC TO-3
H-1570
5 iliean N-P-N and P-N-P Epitaxial-Base High-Power Transistors
General-Purpose Types for Switching and Linear-Amplifier Applications
Features:
High dissipation capability: 125 W at 25°C Low saturation
voltages II Maximum safe-area-of-operation curves II Hermetically sealed JEDEC TO-3 package II High gain at high current .. Thermal-cycling rating curve
RCA-2N6246, 2N6247, 2N6248, and 2N646g.to. are epitaxialbase silicon p-n-p transistors featuring high gain at high current_ RCA-2N6470, 2N6471, and 2N6472· are epitaxial-base silicon n-p-n transistors. They may be used as complements to the 2N6469, 2N6246, and 2N6247, respectively_ All of these devices have a dissipation capability of 125 watts at case temperatures up to 250 C_ They differ in
voltage ratings
and in the current...