2N6107, 2N6109, 2N6111 (PNP), 2N6288, 2N6292 (NPN)
Complementary Silicon Plastic Power Transistors
These devices are de...
2N6107, 2N6109, 2N6111 (PNP), 2N6288, 2N6292 (NPN)
Complementary Silicon Plastic Power Transistors
These devices are designed for use in general−purpose amplifier and switching applications.
Features
High DC Current Gain High Current Gain − Bandwidth Product TO−220 Compact Package These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS (Note 1)
Rating
Symbol Value
Unit
Collector−Emitter
Voltage 2N6111, 2N6288 2N6109 2N6107, 2N6292
VCEO
30 50 70
Vdc
Collector−Base
Voltage 2N6111, 2N6288 2N6109 2N6107, 2N6292
VCB Vdc 40
60
80
Emitter−Base
Voltage
Collector Current − Continuous Collector Current − Peak
Base Current
Total Power Dissipation @ TC = 25_C Derate above 25_C
VEB 5.0 Vdc
IC 7.0 Adc
ICM 10 Adc
IB 3.0 Adc
PD 40 W 0.32 W/°C
Operating and Storage Junction Temperature Range
TJ, Tstg −65 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Indicates JEDEC Registered Data.
THERMAL CHARACTERISTICS Characteristics
Thermal Resistance, Junction−to−Case
Symbol RqJC
Max 3.125
Unit _C/W
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7 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 30 − 50 − 70 VOLTS, 40 WATTS
PNP COLLECTOR 2, 4
NPN COLLECTOR 2, 4
1 BASE
EMITTER 3
4
1 BASE
EMITTER 3
TO−220 CASE 221A
STYLE 1
1 2 3
MARKING DIAGRAM
2N6xxxG AYWW
*For additional information on our Pb−Free strategy and s...